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参数资料
| 型号： | BU1706AB |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 850 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 83K |
| 代理商： | BU1706AB |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AB
GENERAL DESCRIPTION
High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for
use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
100
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
μ
s
T
mb
≤
25 C
I
C
B
= 0.3 A
I
CM
= 1.5 A; I
B(on)
= 0.3 A
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1750
850
5
8
3
5
100
4
100
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20ms period
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to mounting
base
Thermal resistance junction to ambient
CONDITIONS
TYP.
-
MAX.
1.25
UNIT
K/W
R
th j-a
minimum footprint, FR4 board
55
-
K/W
1
3
mb
2
b
c
e
February 1998
1
Rev 1.000
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