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参数资料
| 型号： | BU2507 |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 扩散硅功率晶体管 |
| 文件页数： | 2/6页 |
| 文件大小： | 53K |
| 代理商： | BU2507 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
T
j
V
= 7.5 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
B
= 1 mA
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
1.0
-
mA
V
700
BV
EBO
V
CEsat
Emitter-base breakdown voltage
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 0.8 A
7.5
-
13.5
-
-
V
V
5.0
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
-
1.1
V
h
FE
h
FE
DC current gain
I
C
= 100 mA; V
= 5 V
I
C
= 4 A; V
CE
= 5 V
-
17
7.0
-
5.0
9.0
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
= 4 A; I
B(end)
= 0.7 A; L
B
= 6
μ
H;
-V
BB
= 4 V
TYP.
68
MAX.
-
UNIT
pF
5.0
0.25
6.0
0.5
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2507AF | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507AX | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507DF | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2507DX | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507FV | 制造商:ROHM 制造商全称:Rohm 功能描述:High-precision 10bit 4ch/6ch D/A Converters |
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