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参数资料
| 型号： | BU4523AW |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 11 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封装： | PLASTIC, SOT-429, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 69K |
| 代理商： | BU4523AW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AW
Fig.9. Typical collector-emitter saturation voltage.
Fig.10. Typical base-emitter saturation voltage.
Fig.11. Typical collector storage and fall time.
I
C
=8 A; T
j
= 85C; f = 16kHz
Fig.12. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
Fig.13. Transient thermal impedance.
Fig.14. Test Circuit RBSOA.
0.1
1
10
100
0.01
0.1
1
10
IC / A
VCEsat / V
Ths = 25 C
Ths = 85 C
IC/IB = 5
BU4523AF/X
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
IB / A
VBEsat / V
IC = 6.5 A
IC = 8 A
Ths = 25 C
Ths = 85 C
BU4523AF/X
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BU4523AW
Zth K/W
D =
t
p
t
p
T
T
P
D
t
0
1
2
3
4
0
2
4
6
8
10
IB / A
ts/tf / us
BU4523AF/X 16kHz
ICsat = 8 A
Ths = 85 C
Freq = 16 kHz
ts
tf
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
May 1998
4
Rev 1.000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU4523AX | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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