参数资料
型号: BU4523DF
厂商: NXP SEMICONDUCTORS
元件分类: 功率晶体管
英文描述: Silicon Diffused Power Transistor
中文描述: 11 A, 800 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, SOT-199, 3 PIN
文件页数: 3/4页
文件大小: 21K
代理商: BU4523DF
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
Fig.1. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
6.2
5.8
3.5
21.5
max
15.7
min
1
2
3
2.1 max
1.2
1.0
0.4
2.0
0.7 max
45o
3.2
5.2 max
3.1
3.3
7.3
15.3 max
0.7
5.45
seating
plane
5.45
3.5 max
not tinned
M
July 1998
3
Rev 1.000
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