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| 型号： | BU52040HFV-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 5/15页 |
| 文件大小： | 465K |
| 描述： | IC HALL EFFECT BIPO LATCH HVSOF5 |
| 特色产品： | ROHM Hall Effect Sensor ICs |
| 标准包装： | 1 |
| 传感范围： | 5mT 跳闸，-5mT 释放 |
| 类型： | 双极卡锁 |
| 电源电压： | 1.65 V ~ 3.3 V |
| 电流 - 电源： | 300µA |
| 电流 - 输出（最大）： | ±0.5mA |
| 输出类型： | 数字，开路集电极 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | SOT-665 |
| 供应商设备封装： | 5-HVSOF |
| 包装： | 标准包装 |
| 其它名称： | BU52040HFV-DKR BU52040HFV-DKR-ND BU52040HFVDKR |
BU52040HFV
Technical Note
5/12
www.rohm.com
2010.01 - Rev.B
?2010 ROHM Co., Ltd. All rights reserved.
?SPAN class="pst BU52040HFV-TR_2601631_6">Description of Operations
(Micro-power Operation)
The Hall Effect IC for wheel keys / trackballs adopts an intermittent operation method to save energy. At startup, the Hall
elements, amp, comparator and other detection circuits power ON and magnetic detection begins. During standby, the
detection circuits power OFF, thereby reducing current consumption. The detection results are held while standby is active,
and then output.
Reference period: 500 祍 (MAX. 1200 祍)
Reference startup time: 24 祍
Fig.13
(Offset Cancellation)
The Hall elements form an equivalent Wheatstone (resistor) bridge circuit. Offset voltage may be generated by a
differential in this bridge resistance, or can arise from changes in resistance due to package or bonding stress.
A dynamic offset cancellation circuit is employed to cancel this offset voltage.
When Hall elements are connected as shown in Fig. 14 and a magnetic field is applied perpendicularly to the Hall
elements, voltage is generated at the mid-point terminal of the bridge. This is known as the Hall voltage.
Dynamic cancellation switches the wiring (shown in the figure) to redirect the current flow to a 90?angle from its original
path, and thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold circuit during the offset cancellation process and then
released.
I
DD
Standby
Startup time
Period
t
GND
V
DD
I
B
?
Hall Voltage
Fig.14
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| BU52051NVX | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52051NVX-TR | 功能描述:板机接口霍耳效应/磁性传感器 1.65-5.5V CMOS Out Bipolar Detect Latch RoHS:否 制造商:Honeywell 类型:Bipolar Hall-Effect Digital Position Sensor 工作电源电压:3 V to 24 V 电源电流:3.5 mA 最大输出电流:20 mA 工作点最小值/最大值:5 G, 55 G 最小/最大释放点（Brp）:- 55 G, - 5 G 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 |
| BU52053NVX | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
| BU52053NVX-TR | 功能描述:板机接口霍耳效应/磁性传感器 Omnipolar Detection Hall IC RoHS:否 制造商:Honeywell 类型:Bipolar Hall-Effect Digital Position Sensor 工作电源电压:3 V to 24 V 电源电流:3.5 mA 最大输出电流:20 mA 工作点最小值/最大值:5 G, 55 G 最小/最大释放点（Brp）:- 55 G, - 5 G 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 |
| BU52054GWZ | 制造商:ROHM 制造商全称:Rohm 功能描述:Omnipolar Detection Hall ICs |
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