参数资料
型号: BU52040HFV-TR
厂商: Rohm Semiconductor
文件页数: 9/15页
文件大小: 465K
描述: IC HALL EFFECT BIPO LATCH HVSOF5
特色产品: ROHM Hall Effect Sensor ICs
标准包装: 1
传感范围: 5mT 跳闸,-5mT 释放
类型: 双极卡锁
电源电压: 1.65 V ~ 3.3 V
电流 - 电源: 300µA
电流 - 输出(最大): ±0.5mA
输出类型: 数字,开路集电极
工作温度: -40°C ~ 85°C
封装/外壳: SOT-665
供应商设备封装: 5-HVSOF
包装: 标准包装
其它名称: BU52040HFV-DKR
BU52040HFV-DKR-ND
BU52040HFVDKR
BU52040HFV 
Technical Note
 
9/12
www.rohm.com
2010.01 - Rev.B
?2010 ROHM Co., Ltd. All rights reserved.
?SPAN class="pst BU52040HFV-TR_2601631_6">Magnet Selection 
 
 
Horizontally Stacked Magnet
 
Vertically Stacked Magnet
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Because the field loop in horizontally stacked magnets extends for a shorter distance than that of vertically stacked magnets,
the gap between the magnet and the hall IC must be decreased. Therefore, if horizontally-stacked magnets are used in the
application, the thickness of the magnet or the area of each section should be increased to allow for a larger gap between
the magnet and IC.
 
Because the IC is unable to detect rotation direction if using magnets that are smaller than the ICs package size, ensure that
the physical size of each N/S division is larger than the ICs package, and that the ICs are properly mounted with an angular
distance of either ?4 or 睛 from one another (where ?= N/S division angle of circular magnet).
 
?SPAN class="pst BU52040HFV-TR_2601631_6">IC Reference Position 
 
 
 
 
 
 
 
 
 
 
 
 
S
 
 
 
 
?SPAN class="pst BU52040HFV-TR_2601631_6">Position of the Hall Effect IC(Reference) 
 
 
 
 
 
 
 
 
 
 
 
UNITmm
S
S
N
Flux
Flux
S
S
N
N
S
N
N
S
Magnet N/S division angle = ?
Circular Magnet
S
N
N
S
N
S
N
S
S
S
S
N
N
N
N
Hall IC (x2)
Mounting angle of Hall IC
Clockwise
rotation
Counterclockwise
rotation
HVSOF5
0.6
0.8
0.2
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