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参数资料
| 型号： | BU9891GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/25页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT VCSP T/R |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (256 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 6-UFBGA，CSPBGA |
| 供应商设备封装： | VCSP50L1 |
| 包装： | 带卷 (TR) |
Datasheet
Serial EEPROM Series Standard EEPROM
WLCSP EEPROM
BU9891GUL-W
(4Kbit)
● General Description
BU9891GUL-W is serial EEPROM of serial 3-line interface method
● Features
3-line communications of chip select, serial clock, serial data input /
output (the case where input and output are shared)
Actions available at high speed 2MHz clock (2.5V to 5.5V)
Speed write available (write time 5ms max.)
1.7V to 5.5V single power source action
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention function at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
At write action (at 5V): 1.2mA (Typ.)
At read action (at 5V): 0.3mA (Typ.)
At standby action (at 5V): 0.1 μ A (Typ.) (CMOS input)
Data retention for 40 years.
Data rewrite up to 100,000times.
Data at shipment all addresses FFFFh
● BU9891GUL-W
● Package W(Typ.) x D(Typ.) x H(Max.)
Capacity
4Kbit
Bit format
256 × 16
Type
BU9891GUL-W
Power source voltage
1.7V to 5.5V
Package type
VCSP50L1
● Absolute Maximum Ratings (Ta=25 ℃ )
Parameter
Impressed voltage
Permissible dissipation
Storage temperature range
Action temperature range
Terminal voltage
Symbol
V CC
Pd
Tstg
Topr
‐
Ratings
-0.3 to +6.5
220
-65 to +125
-40 to +85
-0.3 to V CC +0.3
Unit
V
mW
℃
℃
V
Remarks
When using at Ta=25 ℃ or higher, 2.2mW to be reduced per 1 ℃
● Memory cell characteristics (V CC =1.7V to 5.5V)
Parameter
Number of data rewrite times *1
Data hold years *1
Min.
100,000
40
Limit
Typ.
-
-
Max.
-
-
Unit
Times
Years
Ta=25 ℃
Ta=25 ℃
Condition
1:Not 100% TESTED
○ Shipment data all address FFFFh
*
○ Product structure ： Silicon monolithic integrated circuit
○ This product is not designed protection against radioactive rays
www.rohm.com
?2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 14 ? 001
1/22
TSZ02201-0R2R0G100440-1-2
3.SEP.2012 Rev.001
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