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参数资料
| 型号： | BU9891GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 17/25页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT VCSP T/R |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (256 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 6-UFBGA，CSPBGA |
| 供应商设备封装： | VCSP50L1 |
| 包装： | 带卷 (TR) |
BU9891GUL-W (4Kbit)
Datasheet
6) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control
line.
Microcontroller
EEPROM
DI/O PORT
DI
R
DO
Figure 47. DI, DO control line common connection
○ Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the
same time in the following points.
(1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→ When address data A0 = “1” input, through current route occurs.
EEPROM CS input
EEPROM SK input
“H”
EEPROM DI input
A1
A0
Collision of DI input and DO output
EEPROM DO output
Microcontroller DI/O port
High-Z
A1
A0
0
D15 D14 D13
High-Z
Microcontroller output
Microcontroller input
Figure 48. Collision timing at read data output at DI, DO direct connection
(2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→ Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.
～ ～
EEPROM CS input
EEPROM SK input
EEPROM DI input
Write command
Write command
Write command
～ ～
～ ～
～ ～
～ ～
～ ～
BUSY
EEPROM DO output
Write command
～ ～
READY
～ ～
READY
High-Z
Collision of DI input and DO output
Microcontroller DI/O port
Write command
BUSY
～ ～
READY
～ ～
Microcontroller output
Microcontroller input
Microcontroller output
Figure 49. Collision timing at DI, DO direct connection
Note) As for the case (2), attention must be paid to the following.
When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is
input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY
output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output.
CS
SK
Start bit
Because DI=”H”, set
SK=”L” at CS rise.
DI
READY
DO
High-Z
Figure 50. Start bit input timing at DI, DO direct connection
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
17/22
TSZ02201-0R2R0G100440-1-2
3.SEP.2012 Rev.001
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相关代理商/技术参数 |
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| BU9897GUL-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Silicon Monolithic Integrated Circuit |
| BU9897GUL-W_11 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series Serial EEPROMs WL-CSP EEPROM family I2C BUS |
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| BU99022NUX-3TR | 功能描述:IC EEPROM I2C BUS 2KB 8VSON 制造商:rohm semiconductor 系列:- 包装:剪切带（CT） 零件状态:有效 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K （256 x 8 x 2） 速度:400kHz 接口:I2C，2 线串口 电压 - 电源:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:VSON008X2030 标准包装:1 |
| BU9910KV | 制造商:ROHM 制造商全称:Rohm 功能描述:Status display LCD driver for PCs with I2C Bus interface |
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