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参数资料
| 型号： | BU9897GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 13/25页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SERIAL VCSP50L2 |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 12-UFBGA，CSPBGA |
| 供应商设备封装： | VCSP50L2 |
| 包装： | 带卷 (TR) |
BU9897GUL-W (128Kbit)
Datasheet
● Write Command
○ Write cycle
? Arbitrary data is written to EEPROM. When to write only 1 byte, byte write normally used, and when to write continuous
data of 2 bytes or more, simultaneous write is possible by page write cycle. The maximum number of write bytes is
specified per device of each capacity.Up to 64 arbitrary bytes can be written.
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
1st WORD
ADDRESS
2nd WORD
ADDRESS
DATA
O
P
SDA
LINE
1 0 1 0 0 0 0
R A
＊ ＊
WA
A
WA
0
A
D7
D0
A
/
C
13
C
C
C
W K
K
K
K
Figure 31. Byte write cycle
S
W
T
A
R
I
S
T
SDA
LINE
R
T
SLAVE
ADDRESS
1 0 1 0 0 0 0
T
E
R A
/ C
1st WORD
ADDRESS(n)
＊ ＊
WA
13
A
C
2nd WORD
ADDRESS(n)
WA
0
A
C
D7
DATA(n)
D0
A
C
DATA(n+31)
D0
A
C
O
P
W K
K
K
K
K
Figure 32. Page write cycle
? Data is written to the address designated by word address (n-th address).
? By issuing stop bit after 8bit data input, write to memory cell inside starts.
? When internal write is started, command is not accepted for tWR (5ms at maximum).
? By page write cycle, the following can be written in bulk: Up to 64 bytes.
(Refer to "Internal address increment " in Page 14.)
? As for page write cycle of BU9897GUL-W , after the significant 7 bits of word address, are designated arbitrarily, by
continuing data input of 2 bytes or more, the address of insignificant 6 bits is incremented internally, and data up to 64
bytes can be written.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
13/22
TSZ02201-0R2R0G100500-1-2
4.SEP.2012 Rev.001
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