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参数资料
| 型号： | BUK436-200A |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| 中文描述： | 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 54K |
| 代理商： | BUK436-200A |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 200 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
GS
= 10 V;
I
D
2.1
-
-
-
-
-
3.0
1
0.1
10
0.15
0.17
4.0
10
1.0
100
0.16
0.20
V
μ
A
mA
nA
BUK436-200A
BUK436-200B
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 10 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
8.5
-
-
-
-
-
-
-
-
TYP.
16
1500
300
60
20
40
145
50
5
MAX.
-
2000
400
100
30
60
185
70
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V;
R
gen
= 50
;
R
GS
= 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
5
-
nH
L
s
Internal source inductance
-
12.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
19
UNIT
A
-
I
F
= 19 A ; V
GS
= 0 V
I
F
= 19 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
76
1.7
-
-
A
V
ns
μ
C
1.0
180
2.5
July 1997
2
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK436-200B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| BUK445-200A | PowerMOS transistor |
| BUK445-200B | PowerMOS transistor |
| BUK452-60A | PowerMOS transistor |
| BUK452-60B | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK436-200A/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MOSFET TO 247 |
| BUK436-200B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK436-50A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK436-50B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK436-60A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
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