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参数资料
| 型号： | BUK436-200A |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| 中文描述： | 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/7页 |
| 文件大小： | 54K |
| 代理商： | BUK436-200A |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 10 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
BUK456-200A
VGS / V
40
30
20
10
0
ID / A
Tj / C =
150
25
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
10
20
30
40
BUK456-200A
ID / A
gfs / S
20
15
10
5
0
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y6-200
July 1997
4
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK436-200B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| BUK445-200A | PowerMOS transistor |
| BUK445-200B | PowerMOS transistor |
| BUK452-60A | PowerMOS transistor |
| BUK452-60B | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK436-200A/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MOSFET TO 247 |
| BUK436-200B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK436-50A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK436-50B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK436-60A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
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