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参数资料
| 型号： | BUK436-200A |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| 中文描述： | 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/7页 |
| 文件大小： | 54K |
| 代理商： | BUK436-200A |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.15. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
5.3
4.0
max
21
max
15.5
min
1
2.2 max
3.2 max
0.4
2.5
0.9 max
5.3 max
3.5
16 max
5.45
seating
plane
5.45
M
o
15.5
max
2
3
1.1
3.5
max
1.8
7.3
July 1997
6
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK436-200B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| BUK445-200A | PowerMOS transistor |
| BUK445-200B | PowerMOS transistor |
| BUK452-60A | PowerMOS transistor |
| BUK452-60B | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK436-200A/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MOSFET TO 247 |
| BUK436-200B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK436-50A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK436-50B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK436-60A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
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