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参数资料
| 型号： | BUK7109-75AIE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | TO-263VAR |
| 中文描述： | 晶体管 | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | TO-263VAR封装 |
| 文件页数： | 9/16页 |
| 文件大小： | 341K |
| 代理商： | BUK7109-75AIE |
Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
Product data
Rev. 01 — 20 August 2003
2 of 16
9397 750 11694
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by package.
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
40
V
VDGS
drain-gate voltage (DC)
-
40
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
-
155
A
-75
A
-75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
620
A
Ptot
total power dissipation
-
272
W
IGS(CL)
gate-source clamping current
continuous
-
10
mA
tp = 5 ms; δ = 0.01
-
50
mA
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Visol(FET-TSD) FET to temperature sense diode
isolation voltage
-
±100
V
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
155
A
-75
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
620
A
Avalanche ruggedness
EDS(AL)S
non-repetitive avalanche energy
unclamped inductive load; ID =75A;
VDS ≤ 40 V; VGS =10V;
RGS =50 ; starting Tj =25 °C
-
1.46
J
Electrostatic discharge
Vesd
electrostatic discharge voltage, pins
1,3,5
Human Body Model; C = 100 pF;
R = 1.5 k
-6
kV
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| BUK7109-75ATE | TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-426 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK7109-75AIE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7109-75AIE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7109-75ATE | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET |
| BUK7109-75ATE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7109-75ATE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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