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参数资料
| 型号： | BZA100,118 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 6.8V 20-SOIC |
| 标准包装： | 2,000 |
| 电压 - 反向隔离（标准值）： | 5.25V |
| 电压 - 击穿： | 6.4V |
| 功率（瓦特）： | 27.5W |
| 电极标记： | 18 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 20-SO |
| 包装： | 带卷 (TR) |
| 其它名称： | 934034860118 BZA100 /T3 BZA100 /T3-ND |
NXP Semiconductors
18-fold ESD transient voltage
suppressor
Product data sheet
BZA100
FEATURES
DESCRIPTION
PINNING
? SO20 SMD package allows 18
separate voltage regulator diodes
in a common anode configuration
? Working voltage: typ. 6.8 V
? Forward voltage: max. 1.3 V
? Maximum reverse peak power
18-fold monolitic transient voltage
suppressor. Its 18-fold junction
common anode design protects 18
separate lines using only one
package. This device is ideal for
situations where board space is a
premium.
PIN
1 to 5
6 and 16
7 to 15
17 to 20
DESCRIPTION
cathode (k 1 to k 5 )
common anode (a 1 ; a 2 )
cathode (k 6 to k 14 )
cathode (k 15 to k 18 )
dissipation: 27.5 W at t p = 1 ms
? Maximum clamping voltage at peak
pulse current: 11 V at 2.5 A
? Low leakage current: max. 2 μ A
handbook, 4 columns
k1 1
20 k18
? ESD rating >8 kV, according
k2
2
19 k17
IEC 801-2.
k3
3
18 k16
20
19
18
17
16
15
14
13
12
11
k4
4
17 k15
APPLICATIONS
k5
5
16 a2
? Where transient overvoltage
protection in voltage and ESD
a1
6
SO20
15 k14
sensitive equipment is required
k6
7
14 k13
1
2
3
4
5
6
7
8
9
10
such as:
k7
8
13 k12
– Computers
k8
9
12 k11
MBG396
– Printers
– Business machines
– Communication systems
k9 10
11 k10
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
– Medical equipment.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I Z
I F
I FSM
I ZSM
PARAMETER
working current
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
CONDITIONS
t p = 1 ms; square pulse
t p = 1 ms; square pulse; see Fig.2
?
?
?
?
MIN.
MAX.
note 1
200
4
2.5
UNIT
mA
mA
A
A
P tot
total power dissipation
see Fig.3
up to T s = 60 ° C; note 2
up to T amb = 25 ° C; note 3
?
?
1.6
1.25
W
W
P ZSM
non-repetitive peak reverse power
t p = 1 ms; square pulse; see Fig.4
?
27.5
W
dissipation
T stg
T j
storage temperature
operating junction temperature
? 65
?
+150
150
° C
° C
Notes
1. DC working current limited by P tot max .
2. One or more diodes loaded; T s is the temperature at the soldering point.
3. One or more diodes loaded; device mounted on a printed-circuit board with R th a-s = 43.5 K/W.
1997 Dec 02
2
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