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参数资料
| 型号： | BZT55B9V1GS18 |
| 厂商： | VISHAY TELEFUNKEN |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | SOD-80, QUADROMELF-2 |
| 文件页数： | 6/6页 |
| 文件大小： | 153K |
| 代理商： | BZT55B9V1GS18 |
BZT55C...
Vishay Telefunken
Rev. 4, 12-Mar-01
6 (6)
www.vishay.com
Document Number 85509
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BZT55B9V1-GS18 | 功能描述:稳压二极管 9.1 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| BZT55C10 | 功能描述:稳压二极管 10 Volt 500mW 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| BZT55C10 L0G | 功能描述:DIODE ZENER 10V 500MW MINI MELF 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:10V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:15 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 7.5V 不同 If 时的电压 - 正向（Vf:1V @ 10mA 工作温度:-65°C ~ 175°C（TJ） 安装类型:表面贴装 封装/外壳:DO-213AC, MINI-MELF, SOD-80 供应商器件封装:迷你型 MELF 标准包装:10,000 |
| BZT55C10 L1 | 制造商:SKMI/Taiwan 功能描述:Diode Zener Single 10V 5% 500mW 2-Pin Quadro Mini-MELF T/R |
| BZT55C10 L1G | 功能描述:DIODE ZENER 10V 500MW MINI MELF 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:10V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:15 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 7.5V 不同 If 时的电压 - 正向（Vf:1V @ 10mA 工作温度:-65°C ~ 175°C（TJ） 安装类型:表面贴装 封装/外壳:DO-213AC, MINI-MELF, SOD-80 供应商器件封装:迷你型 MELF 标准包装:2,500 |
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