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参数资料
型号： C8051F300-GM
厂商： Silicon Laboratories Inc
文件页数： 167/178页
文件大小： 0K
描述： IC 8051 MCU 8K FLASH 11QFN
产品培训模块： Serial Communication Overview
标准包装： 122
系列： C8051F30x
核心处理器： 8051
芯体尺寸： 8-位
速度： 25MHz
连通性： SMBus（2 线/I²C），UART/USART
外围设备： POR，PWM，温度传感器，WDT
输入/输出数： 8
程序存储器容量： 8KB（8K x 8）
程序存储器类型： 闪存
RAM 容量： 256 x 8
电压 - 电源 (Vcc/Vdd)： 2.7 V ~ 3.6 V
数据转换器： A/D 8x8b
振荡器型： 内部
工作温度： -40°C ~ 85°C
封装/外壳： 10-VFDFN 裸露焊盘
包装： 管件
产品目录页面： 623 (CN2011-ZH PDF)
配用： 336-1444-ND - ADAPTER PROGRAM TOOLSTICK F300
336-1351-ND - KIT REF DES TEMP COMPENS RTC
336-1348-ND - KIT STARTER TOOLSTICK
336-1283-ND - KIT REF DESIGN DTMF DECODER
336-1278-ND - KIT TOOL EVAL SYS IN A USB STICK
336-1246-ND - DEV KIT F300/301/302/303/304/305
其它名称： 336-1245
Rev. 2.9
89
C8051F300/1/2/3/4/5
10. Flash Memory
On-chip, reprogrammable Flash memory is included for program code and non-volatile data storage. The
Flash memory can be programmed in-system, a single byte at a time, through the C2 interface or by soft-
ware using the MOVX instruction. Once cleared to logic 0, a Flash bit must be erased to set it back to logic
1. Flash bytes would typically be erased (set to 0xFF) before being reprogrammed. The write and erase
operations are automatically timed by hardware for proper execution; data polling to determine the end of
the write/erase operation is not required. Code execution is stalled during a Flash write/erase operation.
Refer to Table 10.1 for complete Flash memory electrical characteristics.
10.1. Programming The Flash Memory
The simplest means of programming the Flash memory is through the C2 interface using programming
tools provided by Silicon Labs or a third party vendor. This is the only means for programming a non-initial-
ized device. For details on the C2 commands to program Flash memory, see Section “17. C2 Interface”
on page 173.
To ensure the integrity of Flash contents, it is strongly recommended that the on-chip VDD Monitor
be enabled in any system that includes code that writes and/or erases Flash memory from soft-
ware.
10.1.1. Flash Lock and Key Functions
Flash writes and erases by user software are protected with a lock and key function; Flash reads by user
software are unrestricted. The Flash Lock and Key Register (FLKEY) must be written with the correct key
codes, in sequence, before Flash operations may be performed. The key codes are: 0xA5, 0xF1. The tim-
ing does not matter, but the codes must be written in order. If the key codes are written out of order, or the
wrong codes are written, Flash writes and erases will be disabled until the next system reset. Flash writes
and erases will also be disabled if a Flash write or erase is attempted before the key codes have been writ-
ten properly. The Flash lock resets after each write or erase; the key codes must be written again before a
following Flash operation can be performed. The FLKEY register is detailed in SFR Definition 10.2.
10.1.2. Flash Erase Procedure
The Flash memory can be programmed by software using the MOVX instruction with the address and data
byte to be programmed provided as normal operands. Before writing to Flash memory using MOVX, Flash
write operations must be enabled by: (1) setting the PSWE Program Store Write Enable bit (PSCTL.0) to
logic 1 (this directs the MOVX writes to target Flash memory); and (2) Writing the Flash key codes in
sequence to the Flash Lock register (FLKEY). The PSWE bit remains set until cleared by software.
A write to Flash memory can clear bits but cannot set them; only an erase operation can set bits in Flash.
A byte location to be programmed should be erased before a new value is written. The 8k byte Flash
memory is organized in 512-byte pages. The erase operation applies to an entire page (setting all bytes in
the page to 0xFF). To erase an entire 512-byte page, perform the following steps:
Step 1. Disable interrupts (recommended).
Step 2. Set the Program Store Erase Enable bit (PSEE in the PSCTL register).
Step 3. Set the Program Store Write Enable bit (PSWE in the PSCTL register).
Step 4. Write the first key code to FLKEY: 0xA5.
Step 5. Write the second key code to FLKEY: 0xF1.
Step 6. Using the MOVX instruction, write a data byte to any location within the 512-byte page to
be erased.
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相关代理商/技术参数
参数描述
C8051F300-GMR 功能描述:8位微控制器 -MCU 8KB 8ADC 11P MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
C8051F300-GS 功能描述:8位微控制器 -MCU 8KB Flash, 8-bit ADC 2%osc RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
C8051F300-GSR 功能描述:8位微控制器 -MCU 8KB 8ADC 2%osc MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
C8051F300P 功能描述:8位微控制器 -MCU PROTO TYPE VERSION IN 14P DIP PACKAGE RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
C8051F300R 功能描述:8位微控制器 -MCU 8 ADC calOSC RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
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