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参数资料
| 型号： | CAT24C128HU3IGT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SERIAL 128KB I2C 8UDFN |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | 8-UDFN（2x3） |
| 包装： | 带卷 (TR) |
CAT24C128
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
Rating
? 65 to +150
? 0.5 to +6.5
Units
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than ? 0.5 V or higher than V CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than ? 1.5 V or overshoot to no more than V CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Notes 3, 4)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C
4. The new product revision (C) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re ? programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS ? Mature Product (Rev B)
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise specified.)
Symbol
I CCR
I CCW
Parameter
Read Current
Write Current
Test Conditions
Read, f SCL = 400 kHz
Write, f SCL = 400 kHz
Min
Max
1
3
Units
mA
mA
I SB
Standby Current
All I/O Pins at GND or V CC
T A = ? 40 ° C to +85 ° C
1
m A
T A = ? 40 ° C to +125 ° C
2
I L
I/O Pin Leakage
Pin at GND or V CC
T A = ? 40 ° C to +85 ° C
1
m A
T A = ? 40 ° C to +125 ° C
2
V IL
V IH
V OL1
V OL2
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
V CC ≥ 2.5 V, I OL = 3.0 mA
V CC < 2.5 V, I OL = 1.0 mA
? 0.5
V CC x 0.7
V CC x 0.3
V CC + 0.5
0.4
0.2
V
V
V
V
Table 4. PIN IMPEDANCE CHARACTERISTICS ? Mature Product (Rev B)
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise specified.)
Symbol
C IN (Note 5)
C IN (Note 5)
I WP (Note 6)
Parameter
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current
Conditions
V IN = 0 V
V IN = 0 V
V IN < V IH
V IN > V IH
Max
8
6
200
1
Units
pF
pF
m A
m A
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
6. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull ? down is relatively strong;
therefore the external driver must be able to supply the pull ? down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V CC ), the strong pull ? down reverts to a weak current source.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT24C128HU3I-GT3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT24C128HU4IGT3 | 功能描述:电可擦除可编程只读存储器 DPPNV32TAPSUP/DOWN RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C128LGI | 制造商:Catalyst Semiconductor 功能描述: |
| CAT24C128LI-G | 功能描述:电可擦除可编程只读存储器 (16384x8) 128K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C128UI-G | 制造商:ON Semiconductor 功能描述: |
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