参数资料
型号: CAT24C64WI-GT3
厂商: ON Semiconductor
文件页数: 3/15页
文件大小: 0K
描述: IC EEPROM 64KBIT 400KHZ 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 807 (CN2011-ZH PDF)
其它名称: CAT24C64WI-GT3DKR
CAT24C64
Table 5. A.C. CHARACTERISTICS
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +125 ° C and V C C = 1.7 V to 5.5 V, T A = ? 4 0 ° C to +85 ° C.) (Note 6)
Standard
V CC = 1.7 V ? 5.5 V
Fast
V CC = 1.7 V ? 5.5 V
Fast ? Plus (Note 9)
V CC = 2.5 V ? 5.5 V
T A = ? 40 5 C to +85 5 C
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Units
F SCL
t HD:STA
t LOW
t HIGH
t SU:STA
t HD:DAT
t SU:DAT
t R (Note 7)
t F (Note 7)
t SU:STO
t BUF
t AA
t DH
T i (Note 7)
t SU:WP
t HD:WP
t WR
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between
STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL
and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
4
4.7
4
4.7
0
250
4
4.7
100
0
2.5
100
1,000
300
3.5
100
5
0.6
1.3
0.6
0.6
0
100
0.6
1.3
100
0
2.5
400
300
300
0.9
100
5
0.25
0.45
0.40
0.25
0
50
0.25
0.5
50
0
1
1,000
100
100
0.40
100
5
kHz
m s
m s
m s
m s
m s
ns
ns
ns
m s
m s
m s
ns
ns
m s
m s
ms
t PU (Notes 7, 8)
Power ? up to Ready Mode
1
1
0.1
1
ms
6.
7.
8.
9.
Test conditions according to “A.C. Test Conditions” table.
Tested initially and after a design or process change that affects this parameter.
t PU is the delay between the time V CC is stable and the device is ready to accept commands.
Fast ? Plus (1 MHz) speed class available for product revision “F”. The die revision “F” is identified by letter “F” or a dedicated marking code
on top of the package.
Table 6. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
Input Reference Levels
Output Reference Levels
Output Load
0.2 x V CC to 0.8 x V CC
≤ 50 ns
0.3 x V CC , 0.7 x V CC
0.5 x V CC
Current Source: I OL = 3 mA (V CC ≥ 2.5 V); I OL = 1 mA (V CC < 2.5 V); C L = 100 pF
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