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参数资料
| 型号： | CAT28F001NI-12T |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 17/18页 |
| 文件大小： | 455K |
| 代理商： | CAT28F001NI-12T |
CAT28F001
8
Doc. No. 1078, Rev. I
READ OPERATIONS
Read Mode
The CAT28F001 memory can be read from any of its
Blocks (Boot Block, Main Block or Parameter Block),
Status Register and Signature Information by sending
the Read Command Mode to the Command Register.
CAT28F001 automatically resets to Read Array mode
upon initial device power up or after exit from deep
power down. A Read operation is performed with both
CE and OE low and with RP and OE high. Vpp can be
either high or low. The data retrieved from the I/O pins
reflects the contents of the memory location correspond-
ing to the state of the 17 address pins. The respective
timing waveforms for the read operation are shown in
Figure 3.
Refer to the AC Read characteristics for
specific timing parameters.
Signature Mode
The signature mode allows the user to identify the IC
manufacturer and the type of the device while the device
resides in the target system. This mode can be activated
in either of two ways; through the conventional method
of applying a high voltage (12V) to address pin A9 or by
sending an instruction to the command register (see
Write Operations).
The conventional method is entered as a regular read
mode by driving the
CE and OE low (with WE high), and
applying the required high voltage on address pin A9
while the other address line are held at VIL.
A Read cycle from address 0000H retrieves the binary
code for the IC manufacturer on outputs I/O7 to I/O0:
Catalyst Code = 0011 0001 (31H)
A Read cycle from address 0001H retrieves the binary
code for the device on outputs I/O7 to I/O0:
CAT28F001T = 1001 0100 (94H)
CAT28F001B = 1001 0101 (95H)
Standby Mode
With
CE at a logic-high level, the CAT28F001 is placed
in a standby mode where most of the device circuitry is
disabled, thereby substantially reducing power con-
sumption. The outputs are placed in a high-impendance
state independent of the
OE status.
Deep Power-Down
When
RP is at logic-low level, the CAT28F001 is placed
in a Deep Power-Down mode where all the device
circuitry are disabled, thereby reducing the power con-
sumption to 0.25
W.
Figure 3. A.C. Timing for Read Operation
ADDRESSES
CE (E)
OE (G)
WE (W)
DATA (I/O)
HIGH-Z
POWER UP
STANDBY
DEVICE AND
ADDRESS SELECTION
OUPUTS
ENABLED
DATA VALID
STANDBY
ADDRESS STABLE
OUTPUT VALID
tAVQV (tACC)
tELQX (tLZ)
tGLQX (tOLZ)
tGLQV (tOE)
tELQV (tCE)
tOH
tGHQZ (tDF)
tEHQZ
tAVAV (tRC)
POWER DOWN
HIGH-Z
tPHQV (tPWH)
RP (P)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F001NI-90B | 功能描述:闪存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F001NI-90T | 功能描述:闪存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F001P-12B | 功能描述:闪存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F001P-12T | 功能描述:闪存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F001P-90B | 功能描述:闪存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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