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参数资料
| 型号： | CAT28F010HRI-90 |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| 封装： | 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32 |
| 文件页数： | 1/15页 |
| 文件大小： | 433K |
| 代理商： | CAT28F010HRI-90 |
1
DESCRIPTION
The CAT28F010 is a high speed 128K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices.
Programming and
Erase are performed through an operation and verify
algorithm. The instructions are input via the I/O bus,
using a two write cycle scheme. Address and Data are
latched to free the I/O bus and address bus during the
write operation.
The CAT28F010 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
BLOCK DIAGRAM
FEATURES
I Fast read access time: 90/120 ns
I Low power CMOS dissipation:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
A max (CMOS levels)
I High speed programming:
–10
s per byte
–2 Sec Typ Chip Program
I 0.5 seconds typical chip-erase
I 12.0V
± 5% programming and erase voltage
I Stop timer for program/erase
I Commercial, industrial and automotive
temperature ranges
I On-chip address and data latches
I JEDEC standard pinouts:
–32-pin DIP
–32-pin PLCC
–32-pin TSOP (8 x 20)
I 100,000 program/erase cycles
I 10 year data retention
I Electronic signature
CAT28F010
1 Megabit CMOS Flash Memory
Licensed Intel second source
2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 1019, Rev. D
I/O0–I/O7
I/O BUFFERS
CE, OE LOGIC
SENSE
AMP
DATA
LATCH
ERASE VOLTAGE
SWITCH
PROGRAM VOLTAGE
SWITCH
COMMAND
REGISTER
CE
OE
WE
VOLTAGE VERIFY
SWITCH
ADDRESS
LA
TCH
Y-DECODER
X-DECODER
Y-GATING
1,048,576 BIT
MEMORY
ARRAY
A0–A16
HA
LOGEN FREE
TM
LEAD FREE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F010HRI-90T | 功能描述:闪存 1 Megabit Boot Block 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010L12 | 功能描述:闪存 (128x8) 1M 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010L-12 | 制造商:ON Semiconductor 功能描述:Flash Memory IC |
| CAT28F010L90 | 功能描述:闪存 (128x8) 1M 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010L-90 | 制造商:Rochester Electronics LLC 功能描述: |
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