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参数资料
| 型号： | CAT28F010HRI-90 |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| 封装： | 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32 |
| 文件页数： | 11/15页 |
| 文件大小： | 433K |
| 代理商： | CAT28F010HRI-90 |
CAT28F010
5
Doc. No. 1019, Rev. D
A.C. CHARACTERISTICS, Read Operation
VCC = +5V ±10%, unless otherwise specified.
28F010-90(7)
28F010-12(7)
JEDEC Standard
Symbol Symbol
Parameter
Min
Max
Min
Max
Unit
tAVAV
tRC
Read Cycle Time
90
120
ns
tELQV
tCE
CE Access Time
90
120
ns
tAVQV
tACC
Address Access Time
90
120
ns
tGLQV
tOE
OE Access Time
35
50
ns
tAXQX
tOH
Output Hold from Address
OE/CE Change
0
ns
tGLQX
tOLZ(1)(6) OE to Output in Low-Z
0
ns
tELZX
tLZ(1)(6)
CE to Output in Low-Z
0
ns
tGHQZ
tDF(1)(2)
OE High to Output High-Z
20
30
ns
tEHQZ
tDF(1)(2)
CE High to Output High-Z
30
40
ns
tWHGL(1)
-
Write Recovery Time Before Read
6
s
SUPPLY CHARACTERISTICS
Limits
Symbol
Parameter
Min
Max.
Unit
VCC
VCC Supply Voltage
4.5
5.5
V
VPPL
VPP During Read Operations
0
6.5
V
VPPH
VPP During Read/Erase/Program
11.4
12.6
V
Note:
(1)
This parameter is tested initially and after a design or process change that affects the parameter.
(2)
Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3)
Input Rise and Fall Times (10% to 90%) < 10 ns.
(4)
Input Pulse Levels = 0.45V and 2.4V. For High Speed Input Pulse Levels 0.0V and 3.0V.
(5)
Input and Output Timing Reference = 0.8V and 2.0V. For High Speed Input and Output Timing Reference = 1.5V.
(6)
Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
(7)
For load and reference points, see Fig. 1
INPUT PULSE LEVELS
REFERENCE POINTS
2.0 V
0.8 V
2.4 V
0.45 V
Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5)
Testing Load Circuit (example)
5108 FHD F04
5108 FHD F03
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
CL = 100 pF
OUT
CL INCLUDES JIG CAPACITANCE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F010HRI-90T | 功能描述:闪存 1 Megabit Boot Block 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010L12 | 功能描述:闪存 (128x8) 1M 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010L-12 | 制造商:ON Semiconductor 功能描述:Flash Memory IC |
| CAT28F010L90 | 功能描述:闪存 (128x8) 1M 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010L-90 | 制造商:Rochester Electronics LLC 功能描述: |
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