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参数资料
| 型号： | CAT28F010GA-12 |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封装： | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 |
| 文件页数： | 12/15页 |
| 文件大小： | 433K |
| 代理商： | CAT28F010GA-12 |
CAT28F010
6
Doc. No. 1019, Rev. D
A.C. CHARACTERISTICS, Program/Erase Operation
VCC = +5V ±10%, unless otherwise specified.
\JEDEC
Standard
28F010-90
28F010-12
Symbol
Parameter
Min
Typ
Max
Min
Typ
Max
Unit
tAVAV
tWC
Write Cycle Time
90
120
ns
tAVWL
tAS
Address Setup Time
0
ns
tWLAX
tAH
Address Hold Time
40
ns
tDVWH
tDS
Data Setup Time
40
ns
tWHDX
tDH
Data Hold Time
10
ns
tELWL
tCS
CE Setup Time
0
ns
tWHEH
tCH
CE Hold Time
0
ns
tWLWH
tWP
WE Pulse Width
40
ns
tWHWL
tWPH
WE High Pulse Width
20
ns
tWHWH1(2)
-
Program Pulse Width
10
s
tWHWH2(2)
-
Erase Pulse Width
9.5
ms
tWHGL
Write Recovery Time
-
Before Read
6
s
tGHWL
Read Recovery Time
-
Before Write
0
s
tVPEL
-VPP Setup Time to CE
100
ns
Note:
(1) Please refer to Supply characteristics for the value of VPPH and VPPL. The VPP supply can be either hardwired or switched. If VPP is
switched, VPPL can be ground, less than VCC + 2.0V or a no connect with a resistor tied to ground.
(2) Program and Erase operations are controlled by internal stop timers.
(3) ‘Typicals’ are not guaranteed, but based on characterization data. Data taken at 25
°C, 12.0V VPP.
(4) Minimum byte programming time (excluding system overhead) is 16
s (10 s program + 6 s write recovery), while maximum is 400 s/
byte (16
s x 25 loops). Max chip programming time is specified lower than the worst case allowed by the programming algorithm since
most bytes program significantly faster than the worst case byte.
(5) Excludes 00H Programming prior to Erasure.
28F010-90
28F010-12
Parameter
Min
Typ
Max
Min
Typ
Max
Unit
Chip Erase Time (3)(5)
0.5
10
0.5
10
Sec
Chip Program Time (3)(4)
2
12.5
2
12.5
Sec
ERASE AND PROGRAMMING PERFORMANCE (1)
相关PDF资料 |
PDF描述 |
|---|---|
| CAT28F010HRI-90 | 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| CAT28F010H14I-90TE13 | 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| CAT28F010TI-12TE13 | 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| CAT28F010TR-12TE7 | 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| CAT34WC02GYI-TE13REV-C | 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F010GA-12T | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 1Mbit 128K x 8bit 120ns 32-Pin PLCC T/R |
| CAT28F010GI12 | 功能描述:闪存 (128x8) 1M 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010-GI-12 | 制造商:ON Semiconductor 功能描述:FLASH 1MB 128KX8 120NS PLCC32 |
| CAT28F010GI-12 | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 1Mbit 128K x 8bit 120ns 32-Pin PLCC Tray 制造商:ON Semiconductor 功能描述:IC FLASH 1MBIT 120NS LCC-32 |
| CAT28F010GI-12T | 功能描述:闪存 1 Megabit Boot Block 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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