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参数资料
| 型号： | CAT28F010GA-12 |
| 元件分类： | PROM |
| 英文描述： | 128K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封装： | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 |
| 文件页数： | 14/15页 |
| 文件大小： | 433K |
| 代理商： | CAT28F010GA-12 |
CAT28F010
8
Doc. No. 1019, Rev. D
READ OPERATIONS
Read Mode
A Read operation is performed with both CE and OE low
and with WE high. VPP can be either high or low,
however, if VPP is high, the Set READ command has to
be sent before reading data (see Write Operations). The
data retrieved from the I/O pins reflects the contents of
the memory location corresponding to the state of the 17
address pins. The respective timing waveforms for the
read operation are shown in Figure 3. Refer to the AC
Read characteristics for specific timing parameters.
Signature Mode
The signature mode allows the user to identify the IC
manufacturer and the type of device while the device
resides in the target system. This mode can be activated
in either of two ways; through the conventional method
of applying a high voltage (12V) to address pin A9 or by
sending an instruction to the command register (see
Write Operations).
The conventional mode is entered as a regular READ
mode by driving the CE and OE pins low (with WE high),
and applying the required high voltage on address pin A9
while all other address lines are held at VIL.
A Read cycle from address 0000H retrieves the binary
code for the IC manufacturer on outputs I/O0 to I/O7:
CATALYST Code = 00110001 (31H)
A Read cycle from address 0001H retrieves the binary
code for the device on outputs I/O0 to I/O7.
28F010 Code = 1011 0100 (B4H)
Standby Mode
With CE at a logic-high level, the CAT28F010 is placed
in a standby mode where most of the device circuitry is
disabled, thereby substantially reducing power con-
sumption. The outputs are placed in a high-impedance
state.
Figure 3. A.C. Timing for Read Operation
28F010 F05
tEHQZt(DF)
ADDRESSES
CE (E)
OE (G)
WE (W)
DATA (I/O)
HIGH-Z
POWER UP
STANDBY
DEVICE AND
ADDRESS SELECTION
OUPUTS
ENABLED
DATA VALID
STANDBY
ADDRESS STABLE
OUTPUT VALID
tAVQV (tACC)
tELQX (tLZ)
tGLQX (tOLZ)
tGLQV (tOE)
tELQV (tCE)
tAXQXt(OH)
tGHQZ (tDF)
tAVAV (tRC)
POWER DOWN
HIGH-Z
tWHGL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F010GA-12T | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 1Mbit 128K x 8bit 120ns 32-Pin PLCC T/R |
| CAT28F010GI12 | 功能描述:闪存 (128x8) 1M 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F010-GI-12 | 制造商:ON Semiconductor 功能描述:FLASH 1MB 128KX8 120NS PLCC32 |
| CAT28F010GI-12 | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 1Mbit 128K x 8bit 120ns 32-Pin PLCC Tray 制造商:ON Semiconductor 功能描述:IC FLASH 1MBIT 120NS LCC-32 |
| CAT28F010GI-12T | 功能描述:闪存 1 Megabit Boot Block 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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