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参数资料
| 型号： | CAT28LV256NA-25T |
| 元件分类： | PROM |
| 英文描述： | 32K X 8 EEPROM 3V, 250 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 6/12页 |
| 文件大小： | 66K |
| 代理商： | CAT28LV256NA-25T |
CAT28LV256
3
Doc. No. 1071, Rev. B
CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol
Test
Max.
Units
Conditions
CI/O(1)
Input/Output Capacitance
10
pF
VI/O = 0V
CIN(1)
Input Capacitance
6
pF
VIN = 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(3) ........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
Max.
Units
Test Method
NEND(1)
Endurance
100,000
Cycles/Byte
MIL-STD-883, Test Method 1033
TDR(1)
Data Retention
100
Years
MIL-STD-883, Test Method 1008
VZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
ILTH(1)(4)
Latch-Up
100
mA
JEDEC Standard 17
MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H
DIN
ACTIVE
Byte Write (CE Controlled)
L
H
DIN
ACTIVE
Standby, and Write Inhibit
H
X
High-Z
STANDBY
Read and Write Inhibit
X
H
High-Z
ACTIVE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28LV256NI25 | 制造商:Catalyst Semiconductor 功能描述: |
| CAT28LV256NI-25 | 功能描述:电可擦除可编程只读存储器 (32kx8) 256K 3V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28LV256NI-30 | 功能描述:电可擦除可编程只读存储器 (32kx8) 256K 3V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28LV256P-25 | 功能描述:电可擦除可编程只读存储器 (32kx8) 256K 3V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28LV256P-30 | 功能描述:电可擦除可编程只读存储器 (32kx8) 256K 3V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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