参数资料
| 型号： | CAT93C66YI-G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KB 2MHZ 8-TSSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K（512 x 8 或 256 x 16） |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 管件 |
CAT93C66, CAT93W66
Device Operation
The CAT93C66 is a 4096 ? bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAT93C66 can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 11 ? bit
instructions control the reading, writing and erase
operations of the device. When organized as X8, seven
12 ? bit instructions control the reading, writing and erase
operations of the device. The CAT93W66 works in x16
mode only. The device operates on a single power supply
and will generate on chip, the high voltage required during
any write operation.
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
after a write operation. The serial communication protocol
follows the timing shown in Figure 2.
Table 11. INSTRUCTION SET
Address
The ready/busy status can be determined after the start of
internal write cycle by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the rising edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin.
The format for all instructions sent to the device is a
logical “1” start bit, a 2 ? bit (or 4 ? bit) opcode, 8 ? bit address
(an additional bit when organized X8) and for write
operations a 16 ? bit data field (8 ? bit for X8 organizations).
The instruction format is shown in Instruction Set table.
Data
Instruction
READ
ERASE
WRITE
EWEN
EWDS
ERAL
WRAL
Start Bit
1
1
1
1
1
1
1
Opcode
10
11
01
00
00
00
00
x8 (Note 11)
A8 ? A0
A8 ? A0
A8 ? A0
11XXXXXXX
00XXXXXXX
10XXXXXXX
01XXXXXXX
x16
A7 ? A0
A7 ? A0
A7 ? A0
11XXXXXX
00XXXXXX
10XXXXXX
01XXXXXX
x8 (Note 11)
D7 ? D0
D7 ? D0
x16
D15 ? D0
D15 ? D0
Comments
Read Address AN – A0
Clear Address AN – A0
Write Address AN – A0
Write Enable
Write Disable
Clear All Addresses
Write All Addresses
11. The x8 memory organization is available for the CAT93C66 only.
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT93C66YI-GT3 | 功能描述:电可擦除可编程只读存储器 4K-Bit Microwire Serial 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66YI-TE13 | 制造商:ON Semiconductor 功能描述:EEPROM Serial-Microwire 4K-Bit 512 x 8/256 x 16 3.3V/5V 8-Pin TSSOP T/R |
| CAT93C66YI-TE13E | 功能描述:电可擦除可编程只读存储器 4K BIT MICROWIRE RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66Y-TE13 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C66ZD4I | 制造商:Catalyst Semiconductor 功能描述: |
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