参数资料
型号: CAT93C66YI-G
厂商: ON Semiconductor
文件页数: 8/16页
文件大小: 0K
描述: IC EEPROM 4KB 2MHZ 8-TSSOP
标准包装: 100
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K(512 x 8 或 256 x 16)
速度: 2MHz
接口: Microwire 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 管件
CAT93C66, CAT93W66
Erase All
Upon receiving an ERAL command (Figure 7), the CS
(Chip Select) pin must be deselected for a minimum of
t CSMIN . The falling edge of CS will start the self clocking
clear cycle of all memory locations in the device. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
device can be determined by selecting the device and polling
the DO pin. Once cleared, the contents of all memory bits
return to a logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
t CSMIN (Figure 8). The falling edge of CS will start the self
clocking data write to all memory locations in the device.
The clocking of the SK pin is not necessary after the device
has entered the self clocking mode. The ready/busy status of
the device can be determined by selecting the device and
polling the DO pin. It is not necessary for all memory
locations to be cleared before the WRAL command is
executed.
SK
CS
STATUS VERIFY
t CS
STANDBY
DI
1
0
0
1
0
t SV
t HZ
DO
HIGH ? Z
BUSY
READY
HIGH ? Z
t EW
Figure 7. ERAL Instruction Timing
SK
CS
STATUS VERIFY
t CSMIN
STANDBY
DI
1
0
0
0
1
D N
D 0
t SV
t HZ
DO
BUSY
READY
HIGH ? Z
t EW
Figure 8. WRAL Instruction Timing
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