参数资料
型号: CAV24C02WE-GT3
厂商: ON Semiconductor
文件页数: 2/11页
文件大小: 0K
描述: EEPROM I2C SER 2KB I2C 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (256 x 8)
速度: 100kHz,400kHz
接口: I²C,2 线串口
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
其它名称: CAV24C02WE-GT3OSDKR
CAV24C02, CAV24C04, CAV24C08, CAV24C16
DEVICE MARKINGS
(TSSOP ? 8)
CSSS
AYMXXX
G
(SOIC ? 8)
24CSSS
AYMXXX
G
CSSS
SSS
= Specific Device Code, where
= 02H for CAV24C02
SSS
SSS
SSS
A
Y
M
XXX
G
= 04K for CAV24C04
= 08K for CAV24C08
= 16K for CAV24C16
= Assembly Location
= Production Year (Last Digit)
= Production Month (1 ? 9, O, N, D)
= Last Three Digits of Assembly Lot Number
= Pb ? Free Package
24CSSS = Specific Device Code, where
SSS = 02H for CAV24C02
SSS = 04K for CAV24C04
SSS = 08K for CAV24C08
SSS = 16K for CAV24C16
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1 ? 9, O, N, D)
XXX = Last Three Digits of Assembly Lot Number
= Pb ? Free Package
G
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Voltage on any pin with respect to Ground (Note 1)
Ratings
? 65 to +150
? 0.5 to +6.5
Units
° C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. During input transitions, voltage undershoot on any pin should not exceed ? 1 V for more than 20 ns. Voltage overshoot on pins A 0 , A 1 , A 2
and WP should not exceed V CC + 1 V for more than 20 ns, while voltage on the I 2 C bus pins, SCL and SDA, should not exceed the absolute
maximum ratings, irrespective of V CC .
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Note 3)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
Table 3. D.C. OPERATING CHARACTERISTICS
(V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise specified.)
Symbol
I CCR
I CCW
Parameter
Read Current
Write Current
Test Conditions
Read, f SCL = 400 kHz
Write, f SCL = 400 kHz
Min
Max
1
2
Units
mA
mA
I SB
Standby Current
All I/O Pins at GND or V CC
T A = ? 40 ° C to +125 ° C
5
m A
I L
V IL
I/O Pin Leakage
Input Low Voltage
Pin at GND or V CC
? 0.5
2
0.3 x V CC
m A
V
V IH
V OL
Input High Voltage
Output Low Voltage
A 0 , A 1 , A 2 and WP
SCL and SDA
V CC > 2.5 V, I OL = 3 mA
0.7 x V CC
0.7 x V CC
V CC + 0.5
5.5
0.4
V
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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