参数资料
型号: CDST-70-G
厂商: Comchip Technology
文件页数: 1/4页
文件大小: 108K
描述: DIODE SWITCHING 70V 200MA SOT23
标准包装: 3,000
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 150mA
电流 - 在 Vr 时反向漏电: 2.5µA @ 70V
电流 - 平均整流 (Io)(每个二极管): 200mA(DC)
电压 - (Vr)(最大): 70V
反向恢复时间(trr): 6ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 带卷 (TR)
Small
Signal
Switching
Diodes
Reverse V
oltage: 70 Volts
Forward Current: 200 mA
RoHS Device
Page 1
REV:E
Features
-Design for mounting on small surface.
-High speed switching.
-High mounting capability
, strong surge
withstand, high reliability.
Mechanical data
-Case: SOT
-23, molded plastic.
-T
erminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.0078 grams
Circuit diagram
CDST-99-G/70-G/56-G
Maximum Ratings
(at Ta=25°C unless otherwise noted)
QW-B0002
Comchip Technology CO., LTD.
Reverse voltage
Forward current
Peak surge forward current
Power dissipation
Thermal resistance, junction to ambient
Maximum junction temperature
Storage temperature
Units
Symbol
Parameter
VR
IF
IFSM
PD
RθJA
TJ
TSTG
Value
70
200
500
225
556
150
-55 to
+150
V
mA
mA
mW
°C
°C
°C/W
1
2
3
CDST-99-G
Marking Code: A7
1
2
3
CDST-70-G
Marking Code: A4
1
2
3
CDST-56-G
Marking Code: A1
Reverse breakdown voltage
Forward voltage
Reverse current
Reverse recovery time
Diode capacitance
Units
Symbol
Parameter
VBR
VF
IR
trr
CT
Conditions
Max.
IR=100μA
@IF=1mA
@IF=10mA
@IF=50mA
@IF=150mA
@VR=70V
IF=IR=10mA, Irr=0.1×IR,
RL=100Ω
VR=0V, f=1.0MHz
0.715
0.855
1.0
1.25
2.5
6
1.5
V
V
μA
nS
pF
Min.
70
Electrical Characteristics
(at Ta=25°C unless otherwise noted)
Dimensions
in
inches
and
(millimeter)
SOT-23
3
1
2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.002(0.05)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.008(0.20) min
相关PDF资料
PDF描述
CDST-7000-G DIODE SWITCHING 100V 200MA SOT23
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