参数资料
型号: CGD1040HI
厂商: NXP SEMICONDUCTORS
元件分类: 倍频器
英文描述: 1 GHz, 20 dB gain GaAs high output power doubler
中文描述: 40 MHz - 1003 MHz RF/MICROWAVE FREQUENCY DOUBLER
封装: ROHS COMPLIANT, SOT-115J, 7 PIN
文件页数: 1/7页
文件大小: 51K
代理商: CGD1040HI
1.
Product prole
1.1 General description
Hybrid amplier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features
I Excellent linearity
I Superior levels of ESD protection
I Extremely low noise
I Excellent return loss properties
I Gain compensation over temperature
I Rugged construction
I Unconditionally stable
I Thermally optimized design
I Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
I Integrated ring wave surge protection
1.3 Applications
I CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
[1]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (
6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2]
Direct Current (DC).
CGD1040HI
1 GHz, 20 dB gain GaAs high output power doubler
Rev. 01 — 22 September 2009
Product data sheet
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb =35 °C; unless otherwise
specied.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Gp
power gain
f = 50 MHz
-
20
-
dB
f = 1003 MHz
19.5 20.8 22.0 dB
CTB
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
74 64 dBc
CCN
carrier-to-composite noise
Vo = 56.4 dBmV at 1003 MHz
63
-
dBc
Itot
total current
440
460
mA
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