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参数资料
| 型号： | CGD1040HI |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 倍频器 |
| 英文描述： | 1 GHz, 20 dB gain GaAs high output power doubler |
| 中文描述： | 40 MHz - 1003 MHz RF/MICROWAVE FREQUENCY DOUBLER |
| 封装： | ROHS COMPLIANT, SOT-115J, 7 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 51K |
| 代理商： | CGD1040HI |
CGD1040HI_1
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 September 2009
3 of 7
NXP Semiconductors
CGD1040HI
1 GHz, 20 dB gain GaAs high output power doubler
5.
Characteristics
[1]
Gp at 1003 MHz minus Gp at 40 MHz.
[2]
Flatness is dened as peak deviation to straight line.
[3]
Direct Current (DC).
[4]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (
6 dB offset); tilt extrapolated to 13.5 dB
at 1003 MHz.
[5]
79 NTSC channels [f = 54 MHz to 550 MHz]; tilt extrapolated to 13.5 dB at 1003 MHz.
Table 5.
Characteristics
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb =35 °C; unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 50 MHz
-
20
-
dB
f = 1003 MHz
19.5
20.8
22.0
dB
SLsl
slope straight line
f = 40 MHz to 1003 MHz
[1] 0.5
-
2
dB
FL
atness of frequency response
f = 40 MHz to 1003 MHz
[2] --
1
dB
RLin
input return loss
f = 40 MHz to 160 MHz
20
-
dB
f = 160 MHz to 320 MHz
20
-
dB
f = 320 MHz to 640 MHz
18
-
dB
f = 640 MHz to 870 MHz
16
-
dB
f = 870 MHz to 1003 MHz
16
-
dB
RLout
output return loss
f = 40 MHz to 160 MHz
20
-
dB
f = 160 MHz to 320 MHz
20
-
dB
f = 320 MHz to 640 MHz
18
-
dB
f = 640 MHz to 870 MHz
16
-
dB
f = 870 MHz to 1003 MHz
16
-
dB
NF
noise gure
f = 50 MHz
-
5
6
dB
f = 1003 MHz
-
5.5
6.5
dB
Itot
total current
[3] -
440
460
mA
79 NTSC channels + 75 digital channels
CTB
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
[4] -
74
64
dBc
CSO
composite second-order distortion Vo = 56.4 dBmV at 1003 MHz
[4] -
78
65
dBc
Xmod
cross modulation
Vo = 56.4 dBmV at 1003 MHz
[4] -
68
-
dB
CCN
carrier-to-composite noise
Vo = 56.4 dBmV at 1003 MHz
[4] 57
63
-
dBc
79 NTSC channels
CTB
composite triple beat
Vo = 58.4 dBmV at 1003 MHz
[5] -
70
-
dBc
CSO
composite second-order distortion Vo = 58.4 dBmV at 1003 MHz
[5] -
76
-
dBc
Xmod
cross modulation
Vo = 58.4 dBmV at 1003 MHz
[5] -
66
-
dB
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| CGD1040HI,112 | 功能描述:射频放大器 1GHz,20 dB gain GaAs H-output PWR doubler RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| CGD1042 | 功能描述:射频放大器 CATV MODULES RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| CGD1042,112 | 功能描述:射频放大器 CATV MODULES RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| CGD1042H | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1 GHz, 23 dB gain high output power doubler |
| CGD1042H,112 | 功能描述:射频混合器 CATV MODULES RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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