参数资料
型号: CGD914MI
厂商: NXP SEMICONDUCTORS
元件分类: 衰减器
英文描述: CATV amplifier module(CATV放大器模块)
中文描述: 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封装: SOT-115J, 7 PIN
文件页数: 7/16页
文件大小: 128K
代理商: CGD914MI
2000 Jul 25
7
Philips Semiconductors
Product specification
CATV amplifier modules
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
50
70
80
60
52
48
40
36
44
400
600
800
MCD984
(1)
(2)
(3)
(4)
Fig.10 Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ
.
(3) Typ.
(4) Typ.
3
σ
.
handbook, halfpage
Xmod
(dB)
0
Vo
(dBmV)
f (MHz)
200
1000
60
80
90
70
52
48
40
36
44
400
600
800
MCD985
(1)
(2)
(3)
(4)
Fig.11 Crossmodulationasafunctionoffrequency
under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ
.
(3) Typ.
(4) Typ.
3
σ
.
handbook, halfpage
CSO
(dB)
0
Vo
(dBmV)
f (MHz)
200
1000
60
80
90
70
52
48
40
36
44
400
600
800
MCD986
(1)
(2)
(3)
(4)
Fig.12 Compositesecondorderdistortion(sum)as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ
.
(3) Typ.
(4) Typ.
3
σ
.
handbook, halfpage
CSO
(dB)
0
Vo
(dBmV)
f (MHz)
200
1000
60
80
90
70
52
48
40
36
44
400
600
800
MCD987
(1)
(2)
(3)
(4)
Fig.13 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ
.
(3) Typ.
(4) Typ.
3
σ
.
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