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| 型号： | CGD987HCI |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率放大器 |
| 英文描述： | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| 封装： | CGD987HCI<SOT115J|<<<1<Always Pb-free,; |
| 文件页数： | 3/9页 |
| 文件大小： | 93K |
| 代理商： | CGD987HCI |
CGD987HCI
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 June 2011
3 of 9
NXP Semiconductors
CGD987HCI
1 GHz, 27 dB gain GaAs high output power doubler
5.
Characteristics
[1]
Gp at 1003 MHz minus Gp at 40 MHz.
[2]
Flatness is defined as peak deviation to straight line.
[3]
Direct Current (DC).
Table 5.
Characteristics
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb =35 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 50 MHz
-
25.5
-
dB
f = 870 MHz
-
26.5
-
dB
f = 1003 MHz
26
27
28
dB
SLsl
slope straight line
f = 40 MHz to 1003 MHz
[1] 0.7
-
2.2
dB
FL
flatness of frequency response
f = 40 MHz to 1003 MHz
[2] --
1
dB
RLin
input return loss
f = 40 MHz to 160 MHz
20
-
dB
f = 160 MHz to 320 MHz
19
-
dB
f = 320 MHz to 640 MHz
18
-
dB
f = 640 MHz to 870 MHz
17
-
dB
f = 870 MHz to 1003 MHz
16
-
dB
RLout
output return loss
f = 40 MHz to 160 MHz
20
-
dB
f = 160 MHz to 320 MHz
18
-
dB
f = 320 MHz to 640 MHz
17
-
dB
f = 640 MHz to 870 MHz
16
-
dB
f = 870 MHz to 1003 MHz
16
-
dB
NF
noise figure
f = 50 MHz
-
4.5
5.5
dB
f = 1003 MHz
-
5
6
dB
Itot
total current
[3] -440
460
mA
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