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| 型号： | CGD987HCI |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率放大器 |
| 英文描述： | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| 封装： | CGD987HCI<SOT115J|<<<1<Always Pb-free,; |
| 文件页数： | 4/9页 |
| 文件大小： | 93K |
| 代理商： | CGD987HCI |
CGD987HCI
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 June 2011
4 of 9
NXP Semiconductors
CGD987HCI
1 GHz, 27 dB gain GaAs high output power doubler
[1]
98 PAL D channels with 8 MHz bandwidth per channel; [f = 47 MHz to 862 MHz]; flat Vo till 862 MHz.
[2]
112 NTSC channels; [f = 45 MHz to 750 MHz]; flat Vo till 750 MHz.
[3]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (
6 dB offset); tilt extrapolated to 13.5 dB
at 1003 MHz.
Table 6.
Distortion characteristics
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb =35 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
98 PAL D channels
CTB
composite triple beat
Vo = 48 dBmV at 862 MHz
[1] -
66
62
dBc
Vo = 50 dBmV at 862 MHz
[1] -
62
-
dBc
CSO
composite second-order distortion
Vo = 48 dBmV at 862 MHz
[1] -
66
60
dBc
Vo = 50 dBmV at 862 MHz
[1] -
63
-
dBc
Xmod
cross modulation
Vo = 48 dBmV at 862 MHz
[1] -
68
-
dB
Vo = 50 dBmV at 862 MHz
[1] -
60
-
dB
112 NTSC channels
CTB
composite triple beat
Vo = 48 dBmV at 750 MHz
[2] -
63
-
dBc
CSO
composite second-order distortion
Vo = 48 dBmV at 750 MHz
[2] -
64
-
dBc
Xmod
cross modulation
Vo = 48 dBmV at 750 MHz
[2] -
66
-
dB
79 NTSC channels + 75 digital channels
CTB
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
[3] -
75
-
dBc
CSO
composite second-order distortion
Vo = 56.4 dBmV at 1003 MHz
[3] -
70
-
dBc
Xmod
cross modulation
Vo = 56.4 dBmV at 1003 MHz
[3] -
68
-
dB
CCN
carrier-to-composite noise
Vo = 56.4 dBmV at 1003 MHz
[3] -57
-dBc
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