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| 型号： | CGD987HCI |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率放大器 |
| 英文描述： | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| 封装： | CGD987HCI<SOT115J|<<<1<Always Pb-free,; |
| 文件页数： | 5/9页 |
| 文件大小： | 93K |
| 代理商： | CGD987HCI |
CGD987HCI
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 June 2011
5 of 9
NXP Semiconductors
CGD987HCI
1 GHz, 27 dB gain GaAs high output power doubler
6.
Package outline
Fig 1.
Package outline SOT115J
UNIT
A2
max.
c
ee1
q
Q
max.
q1
q2
U2
U1
W
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
20.8
9.5
0.51
0.38
0.25 27.2
2.04
2.54
13.75 2.54 5.08 12.7 8.8
4.15
3.85
2.4
38.1 25.4 10.2 4.2
44.75
44.25
8.2
7.8
0.25
0.1
3.8
bF
p
6-32
UNC
y
w
0.7
x
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0
5
10 mm
scale
A
max.
D
max.
L
min.
E
max.
Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
U1
q
q2
q1
b
F
S
A
Z
p
E
A2
L
c
d
Q
U2
M
w
78
9
23
W
e
e1
5
p
1
d
x M B
y M B
B
04-02-04
10-06-18
y M B
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| CGDP1020F5 | 制造商:Carlo Gavazzi 功能描述:DEFINITE PURPOSE CONTACTOR; Operating Voltage:660VAC; Switching Power AC1:3hp; Switching Current AC1:30A; Load Current Inductive:20A; Load Current Resistive:30A; No. of Poles:1; Contact Configuration:SPST-NO; Relay Mounting:Panel ;RoHS Compliant: Yes |
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