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参数资料
| 型号： | CGH40025F-TB |
| 厂商： | Cree Inc |
| 文件页数： | 5/13页 |
| 文件大小： | 2586K |
| 描述： | BOARD DEMO AMP CIRCUIT CGH40025 |
| 标准包装： | 1 |
| 系列： | GaN |
| 类型： | HEMT |
| 频率： | 0Hz ~ 6GHz |
| 适用于相关产品： | CGH40025F/ CGH40025P |
| 已供物品： | 板 |
| 产品目录页面： | 558 (CN2011-ZH PDF) |
| 相关产品： | CGH40025F-ND - TRANS 25W RF GAN HEMT 440166 PKG |
13
CGH40025 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2007-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Disclaimer
Specifcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH40035F | 功能描述:TRANS 35W RF GAN HEMT 440193 PKG RoHS:是 类别:分离式半导体产品 >> RF FET 系列:GaN 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| CGH40035F-TB | 功能描述:BOARD DEMO AMP CIRCUIT CGH40035 RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:GaN 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796 |
| CGH40045 | 制造商:CREE 制造商全称:Cree, Inc 功能描述:45 W, RF Power GaN HEMT |
| CGH40045F | 功能描述:TRANS 45W RF GAN HEMT 440193 PKG RoHS:是 类别:分离式半导体产品 >> RF FET 系列:GaN 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| CGH40045F-TB | 功能描述:BOARD DEMO AMP CIRCUIT CGH40045 RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:GaN 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796 |
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