参数资料
型号: CGH40035F-TB
厂商: Cree Inc
文件页数: 8/13页
文件大小: 1109K
描述: BOARD DEMO AMP CIRCUIT CGH40035
标准包装: 1
系列: GaN
类型: HEMT
频率: 0Hz ~ 6GHz
适用于相关产品: CGH40035F
已供物品:
产品目录页面: 558 (CN2011-ZH PDF)
相关产品: CGH40035F-ND - TRANS 35W RF GAN HEMT 440193 PKG
4
CGH40035 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright ? 2008-2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Swept CW Data of CGH40035 vs. Output Power with Source
and Load Impedances Optimized for PSAT
Power in CGH40035-TB
VDD
= 28 V, I
DQ
= 500 mA, Freq = 3.5 GHz
Simulated Maximum Available Gain and K Factor of the CGH40035F
VDD
= 28 V, I
DQ
= 500 mA
MAG (dB)
K Factor
0
2
4
6
8
10
12
14
16
22 24 26 28 30 32 34 36 38 40 42 44 46 48
Output Power (dBm)
Gain (dB)
0%
10%
20%
30%
40%
50%
60%
70%
80%
Drain Efficien
cy, PAE (%)
Gain
Drain Efficiency
PAE
Effciency
Gain
PAE
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相关代理商/技术参数
参数描述
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