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参数资料
| 型号： | CGH55030F-TB |
| 厂商： | Cree Inc |
| 文件页数： | 1/10页 |
| 文件大小： | 2557K |
| 描述： | RF EVAL HEMT AMPLIFIER |
| 其它有关文件： | GaN HEMT Amp Design for 5-6GHz WiMAX |
| 标准包装： | 2 |
| 类型： | 射频放大器 |
| 频率： | 4.5GHz ~ 6GHz |
| 适用于相关产品： | CGH55030 |
| 已供物品： | 板 |
| 其它名称： | CGH55030-TB CGH55030-TB-ND |
1
Subject to change without notice.
www.cree.com/wireless
CGH55030F2 / CGH55030P2
25 W, C-band, Unmatched, GaN HEMT
Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifcally for high effciency, high
gain and wide bandwidth capabilities, which makes the CGH55030F2/
CGH55030P2 ideal for C-band pulsed or CW saturated amplifers. The
transistor is available in both screw-down, fange and solder-down,
pill packages. Based on appropriate external match adjustment, the
CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.
Package Type: 440196 & 440166
PN: CGH55030P2 & CGH55030F2
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FEATURES
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4.5 to 6.0 GHz Operation
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12 dB Small Signal Gain at 5.65 GHz
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30 W typical PSAT
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60 % Effciency at PSAT
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28 V Operation
APPLICATIONS
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2-Way Private Radio
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Broadband Amplifers
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Cellular Infrastructure
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Test Instrumentation
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Class A, AB Amplifers for Drivers and
Gain Blocks
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH55030P2 | 制造商:CREE 制造商全称:Cree, Inc 功能描述:25 W, C-band, Unmatched, GaN HEMT |
| CGH5503163DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163DLF |
| CGH5503163FLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163FLF |
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