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参数资料
| 型号： | CGH55030F-TB |
| 厂商： | Cree Inc |
| 文件页数： | 4/10页 |
| 文件大小： | 2557K |
| 描述： | RF EVAL HEMT AMPLIFIER |
| 其它有关文件： | GaN HEMT Amp Design for 5-6GHz WiMAX |
| 标准包装： | 2 |
| 类型： | 射频放大器 |
| 频率： | 4.5GHz ~ 6GHz |
| 适用于相关产品： | CGH55030 |
| 已供物品： | 板 |
| 其它名称： | CGH55030-TB CGH55030-TB-ND |
3
CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Small Signal S-Parameters vs Frequency of
CGH55030F2 and CGH55030P2 in the CGH55030-TB
VDD
= 28 V, I
DQ
= 250 mA
Drain Effciency, Power and Gain vs Frequency of the
CGH55030F2 and CGH55030P2 in the CGH55030-TBCGH55030 - GaN HEMT C-Band Performance
Drain Efficiency, Power, and Gain vs FrequencyVDD
= 28 V, I
DQ
= 250 mA
0
2
4
6
8
10
12
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1
Frequency (GHz)
S21 (dB)
-25
-20
-15
-10
-5
0
5
S11 (dB)
S21
S11
4040
50
60
70
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10
20
30
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
D
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Frequency (GHz)
Gain (dB)
Psat (dBm)
Drain Efficiency (%)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH55030P2 | 制造商:CREE 制造商全称:Cree, Inc 功能描述:25 W, C-band, Unmatched, GaN HEMT |
| CGH5503163DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163DLF |
| CGH5503163FLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163FLF |
| CGH5503164DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503164DLF |
| CGH5503164FLF | 制造商:TT Electronics / IRC 功能描述:CGH5503164FLF |
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