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参数资料
| 型号： | CGH55030F-TB |
| 厂商： | Cree Inc |
| 文件页数： | 6/10页 |
| 文件大小： | 2557K |
| 描述： | RF EVAL HEMT AMPLIFIER |
| 其它有关文件： | GaN HEMT Amp Design for 5-6GHz WiMAX |
| 标准包装： | 2 |
| 类型： | 射频放大器 |
| 频率： | 4.5GHz ~ 6GHz |
| 适用于相关产品： | CGH55030 |
| 已供物品： | 板 |
| 其它名称： | CGH55030-TB CGH55030-TB-ND |
5
CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz)
Z Source
Z Load
5500
8.0 – j12.4
14.1 – j12.6
5650
8.7 - j13.1
14.7 – j11.7
5800
8.4 - j14.0
15.4 – j11.0
Note 1. VDD
= 28V, I
DQ
= 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-TB demonstration
amplifer and are not source and load pull data derived from the transistor.
CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source
Z Load
G
S
20
25
30
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
CGH40025F CW Power Dissipation De-rating Curve
0
5
10
15
0 25 50 75 100 125 150 175 200 225 250
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
Maximum Case Temperature (°C)
Note 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH55030P2 | 制造商:CREE 制造商全称:Cree, Inc 功能描述:25 W, C-band, Unmatched, GaN HEMT |
| CGH5503163DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163DLF |
| CGH5503163FLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163FLF |
| CGH5503164DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503164DLF |
| CGH5503164FLF | 制造商:TT Electronics / IRC 功能描述:CGH5503164FLF |
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