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参数资料
| 型号： | CGY2014TT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 衰减器 |
| 英文描述： | GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大器) |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | PLASTIC, HTSSOP-20 |
| 文件页数： | 6/16页 |
| 文件大小： | 98K |
| 代理商： | CGY2014TT |
2000 Apr 11
6
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014TT
AC CHARACTERISTICS
V
DD
= 3.5 V; T
amb
= 25
°
C; measured on the Philips demoboard (see Fig.8).
Notes
1.
The device is adjusted to provide nominal load power into a 50
load. The device is switched off and a 6 : 1 load
replaces the 50
load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit;
see Application Note(tbf).
Isolation can be improved to
20 dBm (typical value) with a pin diode switched in the DCS output matching.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Low band: GSM power amplifier
P
i(LB)
f
RF(LB)
P
o(LB)(max)
η
LB
P
o(LB)(min)
N
RX(LB)
input power
RF frequency range
maximum output power
efficiency
minimum output power
output noise in RX band
2
880
34.5
50
0
35
55
35
+2
915
dBm
MHz
dBm
%
dBm
see Figs 3 and 4
see Fig.3
V
DD
= 0 V; P
i(LB)
= 0 dBm
P
i(LB)
= 0 dBm
f
RF
= 925 to 935 MHz
f
RF
= 935 to 960 MHz
P
i(LB)
= 0 dBm
P
i(LB)
= 0 dBm
P
i(LB)
= 0 dBm; note 1
117
129
35
35
60
dBm/Hz
dBm/Hz
dBc
dBc
dBc
H2
LB
H3
LB
Stab
LB
High band: DCS/PCS power amplifier;
note 2
2nd harmonic level
3rd harmonic level
stability
P
i(HB)
f
RF(HB)
P
o(HB)(max)
η
HB
P
o(HB)(min)
α
HB
input power
RF frequency range
maximum output power
efficiency
minimum output power
high band isolation when
low band is operating
2
1710
32
38
3
32.5
40
32
0
5
1785
dBm
MHz
dBm
%
dBm
dBm
for DCS operation
see Figs 5 and 6
see Fig.5
V
DD
= 0 V; P
i(HB)
= 3 dBm
V
DD(LB)
= 3.5 V; P
i(LB)
= 0 dBm;
V
DD(HB)
= 0 V; P
i(HB)
= 3 dBm;
note 3
P
i(HB)
= 3 dBm
P
i(HB)
= 3 dBm
P
i(HB)
= 3 dBm
P
i(HB)
= 3 dBm; note 1
N
RX(HB)
H2
HB
H3
HB
Stab
HB
output noise in RX band
2nd harmonic level
3rd harmonic level
stability
121
35
35
60
dBm/Hz
dBc
dBc
dBc
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