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参数资料
| 型号： | CGY2014TT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 衰减器 |
| 英文描述： | GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大器) |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封装： | PLASTIC, HTSSOP-20 |
| 文件页数： | 7/16页 |
| 文件大小： | 98K |
| 代理商： | CGY2014TT |
2000 Apr 11
7
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014TT
Performance characteristics in GSM band
handbook, halfpage
800
850
Po
(dBm)
900
1000
33
31
35
η
(%)
60
40
20
0
950
fRF (MHz)
FCA171
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.3
Output power and efficiency as a function of
the frequency.
(1) T
amb
= 85
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
20
°
C.
V
DD1(LB)
= 3 V.
V
DD2(LB)
= V
DD3(LB)
= 3.5 V.
P
i(LB)
= 0 dBm.
handbook, halfpage
Po
(dBm)
0
1
2
4
30
10
0
20
3VDD (V)
FCA176
(1)
(2)
(3)
Fig.4
Output power as a function of the supply
voltage.
(1) T
amb
= 85
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
20
°
C.
f
RF(LB)
= 900 MHz.
P
i(LB)
= 0 dBm.
V
DD1(LB)
= 3 V.
V
DD
= V
DD2(LB)
= V
DD3(LB)
.
Performance characteristics in DCS band
handbook, halfpage
Po
(dBm)
1650
1700
1750
1850
34.5
32.5
31.5
33.5
η
(%)
55
45
25
15
35
1800
fRF (MHz)
FCA172
(3)
(2)
(1)
(3)
(2)
(1)
output power
efficiency
Fig.5
Output power and efficiency as a function of
the frequency.
(1) T
amb
= 85
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
20
°
C.
V
DD1(HB)
= 3 V.
V
DD2(HB)
= V
DD3(HB)
= 3.5 V.
P
i(HB)
= 3 dBm.
handbook, halfpage
Po
(dBm)
0
1
2
4
30
10
0
20
3
VDD (V)
FCA173
(1)
(2)
(3)
Fig.6
Output power as a function of the supply
voltage.
(1) T
amb
= 85
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
20
°
C.
f
RF(HB)
= 1750 MHz.
P
i(HB)
= 3 dBm.
V
DD1(HB)
= 3 V.
V
DD
= V
DD2(HB)
= V
DD3(HB)
.
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