参数资料
型号: CM300DX-12A
厂商: Powerex Inc
文件页数: 2/5页
文件大小: 0K
描述: IGBT MOD DUAL 600V 300A NX SER
标准包装: 2
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.1V @ 15V,300A
电流 - 集电极 (Ic)(最大): 300A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 34nF @ 10V
功率 - 最大: 960W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DX-12A
Dual IGBTMOD? NX-Series Module
300 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Module Weight (Typical)
Baseplate Flatness, On Centerline X, Y (See Below)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T j
T stg
V ISO
CM300DX-12A
-40 to 150
-40 to 125
31
40
330
±0 ~ +100
2500
Units
°C
°C
in-lb
in-lb
Grams
μm
Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T C = 56°C) *1
Peak Collector Current (Pulse) *3
Emitter Current (T C = 25°C) *1*4
Peak Emitter Current (Pulse) *3
Maximum Collector Dissipation (T C = 25°C) *1*4
V CES
V GES
I C
I CM
I E *2
I EM *2
P C
600
±20
300
600
300
600
960
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
*1
*2
*3
*4
Case temperature (T C ) and heatsink temperature (T f ) are defined on the surface of the baseplate and heatsink at just under the chip.
I E , I EM , V EC , t rr and Q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
Junction temperature (T j ) should not increase beyond T j(max ) rating.
BASEPLATE FLATNESS
CHIP LOCATION (TOP VIEW)
MEASUREMENT POINT
Chip Location (Top View)
Y
IGBT
FWDi
NTC Thermistor
X
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
– : CONCAVE
+ : CONVEX
18.6
28.2
47
48
Th
24
23
18.6
29.8
40.9
HEATSINK SIDE
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Dimensions in mm (Tolerance: ± 1mm)
2
Rev. 3/09
相关PDF资料
PDF描述
CM300DX-24A IGBT MOD DUAL 1200V 300A NX SER
CM300DY-12H IGBT MOD DUAL 600V 300A H SER
CM300DY-12NF IGBT MOD DUAL 600V 300A NF SER
CM300DY-24A IGBT MOD DUAL 1200V 300A A SER
CM300DY-24H IGBT MOD DUAL 1200V 300A H SER
相关代理商/技术参数
参数描述
CM300DX-24A 功能描述:IGBT MOD DUAL 1200V 300A NX SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM300DX-24S 功能描述:IGBT MOD DUAL 1200V 300A NX SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM300DX-24S1 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CM300DX-24S1
CM300DX-34SA 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Dual IG NX-Series Module 300 Amperes/1700 Volts
CM300DY-12 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE