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| 型号： | CM300DX-12A |
| 厂商： | Powerex Inc |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 600V 300A NX SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.1V @ 15V，300A |
| 电流 - 集电极 (Ic)（最大）： | 300A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 34nF @ 10V |
| 功率 - 最大： | 960W |
| 输入： | 标准 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DX-12A
Dual IGBTMOD? NX-Series Module
300 Amperes/600 Volts
Electrical and Mechanical Characteristics, T j = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Symbol
I CES
V GE(th)
I GES
V CE(sat)
C ies
C oes
C res
Q G
Test Conditions
V CE = V CES , V GE = 0V
I C = 30mA, V CE = 10V
V GE = V GES , V CE = 0V
I C = 300A, V GE = 15V, T j = 25°C *5
I C = 300A, V GE = 15V, T j = 125°C *5
I C = 300A, V GE = 15V, Chip
V CE = 10V, V GE = 0V
V CC = 300V, I C = 300A, V GE = 15V
Min.
—
5
—
—
—
—
—
—
—
—
Typ.
—
6
—
1.7
1.9
1.6
—
—
—
800
Max.
1.0
7
0.5
2.1
—
—
34.0
4.0
1.2
—
Units
mA
Volts
μA
Volts
Volts
Volts
nF
nF
nF
nC
Inductive
Turn-on Delay Time
t d(on)
—
—
200
ns
Load
Switch
Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
t r
t d(off)
t f
V CC = 300V, I C = 300A,
V GE = ± 15V,
R G = 5.1 Ω , I E = 300A,
—
—
—
—
—
—
150
350
600
ns
ns
ns
Reverse Recovery Time
Reverse Recovery Charge
Emitter-Collector Voltage
t rr *2
Qrr *2
V EC *2
Inductive Load Switching Operation
I E = 300A, V GE = 0V, T j = 25°C *5
I E = 300A, V GE = 0V, T j = 125°C *5
I E = 300A, V GE = 0V, Chip
—
—
—
—
—
—
9
2.0
1.95
1.9
200
—
2.8
—
—
ns
μC
Volts
Volts
Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Module Lead Resistance
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Symbol
R lead
R th(j-c) Q
R th(j-c) D
R th(c-f)
Test Conditions
Main Termnals-Chip (Per Switch)
Per IGBT *1
Per FWDi *1
Case to Heatsink (Per 1 Module)
Min.
—
—
—
—
Typ.
1.1
—
—
0.015
Max.
—
0.13
0.22
—
Units
m Ω
°C/W
°C/W
°C/W
Thermal Grease
Applied *1*7
Internal Gate Resistance
External Gate Resistance
R Gint
R G
T C = 25°C
—
2.0
0
—
—
21
Ω
Ω
NTC Thermistor Sector, T j = 25°C unless otherwise specified
Characteristics
Zero Power Resistance
Symbol
R
Test Conditions
T C = 25°C *1
Min.
4.85
Typ.
5.00
Max.
5.15
Units
k Ω
Deviation of Resistance
? R/R
T C = 100°C, R 100 =
493 Ω *1
–7.3
—
+7.8
%
B Constant
B (25/50)
B = (InR 1 – InR 2 ) / (1/T 1 – 1/T 2 ) *6
—
3375
—
K
Power Dissipation
P 25
T C =
25°C *1
—
—
10
mW
**Thermal resistance values are per 1 element.
*1 Case temperature (T C ) and heatsink temperature (T f ) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 I E , I EM , V EC , t rr and Q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 R 1 : Resistance at Absolute Temperature T 1 (K), R 2 : Resistance at Absolute Temperature T 2 (K), T(K) = T(°C) + 273.15
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m ? K)].
Rev. 3/09
3
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| CM300DY-12NF | IGBT MOD DUAL 600V 300A NF SER |
| CM300DY-24A | IGBT MOD DUAL 1200V 300A A SER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM300DX-24A | 功能描述:IGBT MOD DUAL 1200V 300A NX SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM300DX-24S | 功能描述:IGBT MOD DUAL 1200V 300A NX SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM300DX-24S1 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:CM300DX-24S1 |
| CM300DX-34SA | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Dual IG NX-Series Module 300 Amperes/1700 Volts |
| CM300DY-12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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