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参数资料
| 型号： | CM600DU-5F |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Dual IGBTMOD 600 Amperes/1200 Volts |
| 中文描述： | 600 A, 250 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 72K |
| 代理商： | CM600DU-5F |
2
CM600DU-5F
Dual IGBTMOD
F-Series Module
600 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
C(rms)
I
CM
I
E
I
E(rms)
I
EM
P
c
–
CM600DU-5F
-40 to 150
Units
°
C
°
C
Storage Temperature
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
250
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
c
= 25
°
C)
600
Amperes
350
Amperes (rms)
Peak Collector Current
1200*
Amperes
Emitter Current** (T
c
= 25
°
C)
600
Amperes
350
Amperes (rms)
Peak Emitter Current**
1200*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C, T
j
≤
150
°
C)
Mounting Torque, M6 Main Terminal
1100
Watts
40
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
Weight
–
580
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 60mA, V
CE
= 10V
I
C
= 600A, V
GE
= 10V, T
j
= 25
°
C
I
C
= 600A, V
GE
= 10V, T
j
= 125
°
C
V
CC
= 100V, I
C
= 600A, V
GE
= 10V
I
E
= 600A, V
GE
= 0V
Min.
–
Typ.
–
Max.
1
Units
mA
Gate Leakage Current
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
3.0
4.0
5.0
Volts
Collector-Emitter Saturation Voltage
–
1.2
1.7
Volts
–
1.1
–
Volts
Total Gate Charge
Q
G
V
EC
–
2200
–
nC
Emitter-Collector Voltage**
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
–
–
2.0
Volts
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
170
nf
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
11
nf
Reverse Transfer Capacitance
–
–
5.7
nf
Turn-on Delay Time
V
CC
= 100V, I
C
= 600A,
V
GE1
= V
GE2
= 10V,
R
G
= 4.2 ,
Inductive Load
–
–
850
ns
Rise Time
–
–
600
ns
Turn-off Delay Time
–
–
1100
ns
Fall Time
–
–
500
ns
Diode Reverse Recovery Time**
Switching Operation
–
–
300
ns
Diode Reverse Recovery Charge**
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
I
E
= 600A
–
20.0
–
μ
C
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