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参数资料
| 型号： | CM600DU-5F |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Dual IGBTMOD 600 Amperes/1200 Volts |
| 中文描述： | 600 A, 250 V, N-CHANNEL IGBT |
| 文件页数： | 3/4页 |
| 文件大小： | 72K |
| 代理商： | CM600DU-5F |
3
CM600DU-5F
Dual IGBTMOD
F-Series Module
600 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c')
Q
Per IGBT 1/2 Module
–
–
0.11
Thermal Resistance, Junction to Case
Per FWDi 1/2 Module
–
–
0.20
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.020
–
Thermal Resistance, Junction to Case
Per IGBT 1/2 Module
–
–
0.05
T
C
Reference Point Under Chip
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT (TYPICAL)
0
1
2
3
4
5
600
0
10
8
6
6.5
6.25
5.25
T
j
= 25
o
C
300
900
1200
5.5
5
5.75
V
GE
= 15V
600
0
300
900
1200
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
C
,
TRANSFE(TYPICAL)
0
2
4
6
8
10
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
COLLECTOR-EMITTER
SATURATION VO(TYPICAL)
2.0
0
400
800
1.6
1.2
0.8
0.4
0
1200
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
S
C
,
SATURATICOLL(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25
°
C
I
C
= 1200A
I
C
= 600A
I
C
= 240A
0.6
0.8
1.0
1.2
1.4
1.6
1.8
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FORFRE(TYPICAL)
E
E
,
T
j
= 25
°
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
4
10
1
10
2
10
1
10
3
10
0
V
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
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相关代理商/技术参数 |
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| CM600DU-5F_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM600DXL-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE DUAL 600A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 600A, Transistor Polarity:Dual N Channel, DC Collector Current:600A, Collector Emitter Voltage Vces:1.85V, Power Dissipation Pd:4.545kW, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES DUAL 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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| CM600DY12NF | 制造商:Mitsubishi 功能描述:SHIPS IN 48 HOURS |
| CM600DY-12NF | 功能描述:IGBT MOD DUAL 600V 600A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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