- 您现在的位置：买卖IC网 > PDF目录381676 > CM600DY-34H (POWEREX INC) HIGH POWER SWITCHING USE INSULATED TYPE PDF资料下载
参数资料
| 型号： | CM600DY-34H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 600 A, 1700 V, N-CHANNEL IGBT |
| 封装： | POWER MODULE-10 |
| 文件页数： | 2/4页 |
| 文件大小： | 45K |
| 代理商： | CM600DY-34H |
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM600DY-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
°
C)
V
GE
= 0V
V
CE
= 0V
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
Pulse
T
C
= 25
°
C, IGBT part
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
1700
±
20
600
1200
600
1200
6200
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
V
V
A
A
A
A
W
°
C
°
C
V
N·m
N·m
N·m
kg
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector current
Emitter current
Symbol
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM
(Note 2)
P
C
(Note 3)
T
j
T
stg
V
iso
Item
Conditions
Unit
Ratings
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 850V, I
C
= 600A, V
GE
= 15V
V
CC
= 850V, I
C
= 600A
V
GE1
= V
GE2
= 15V
R
G
= 3.3
Resistive load switching operation
I
E
= 600A, V
GE
= 0V
I
E
= 600A
die / dt = –1200A /
μ
s
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
I
C
= 60mA, V
CE
= 10V
I
C
= 600A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
12
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.020
0.064
—
mA
μ
A
nF
nF
nF
μ
C
μ
s
μ
s
μ
s
μ
s
V
μ
s
μ
C
K/W
K/W
K/W
—
—
2.75
3.30
70
10.0
3.8
3.3
—
—
—
—
2.40
—
100
—
—
0.016
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.5
4.5
6.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Min
Typ
Max
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC
(Note 2)
t
rr
(Note 2)
Q
rr
(Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
Thermal resistance
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
—
—
相关PDF资料 |
PDF描述 |
|---|---|
| CM600E2Y-34H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HA-24A | Single IGBTMOD⑩ A-Series Module 600 Amperes/1200 Volts |
| CM600HA24H | Single IGBTMOD H-Series Module 600 Amperes/1200 Volts |
| CM600HB-90H | Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts |
| CM75DU-12F | Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600DY-34H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600E2Y34H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 600A I(C) |
| CM600E2Y-34H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600E2Y-34H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600E3U-12NFH | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NFH 600A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 600V, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:1.42kW; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40C ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。