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参数资料
| 型号： | CM600DY-34H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 600 A, 1700 V, N-CHANNEL IGBT |
| 封装： | POWER MODULE-10 |
| 文件页数： | 3/4页 |
| 文件大小： | 45K |
| 代理商： | CM600DY-34H |
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM600DY-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
C
C
GATE-EMITTER VOLTAGE V
GE
(V)
C
S
C
COLLECTOR CURRENT I
C
(A)
800
1000
1200
400
200
0
10
0
2
4
6
8
600
800
1000
1200
400
200
0
600
20
0
4
8
12
16
0
20
16
12
8
4
10
8
6
4
2
0
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
C
S
C
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
E
E
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T
j
= 25
°
C
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
T
j
= 25
°
C
V
GE
= 13V
V
GE
= 11V
V
GE
= 12V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
I
C
= 1200A
I
C
= 600A
I
C
= 240A
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
10
1
2 3
10
–1
5 710
0
2 3 5 710
1
2 3 5 710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
CAPACITANCE VS. V
CE
(TYPICAL)
C
i
,
o
,
r
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
°
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
0
5
4
3
1
2
0
200
400
600
800
1000 1200
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
PERFORMANCE CURVES
相关PDF资料 |
PDF描述 |
|---|---|
| CM600E2Y-34H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HA-24A | Single IGBTMOD⑩ A-Series Module 600 Amperes/1200 Volts |
| CM600HA24H | Single IGBTMOD H-Series Module 600 Amperes/1200 Volts |
| CM600HB-90H | Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts |
| CM75DU-12F | Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600DY-34H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600E2Y34H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 600A I(C) |
| CM600E2Y-34H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600E2Y-34H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600E3U-12NFH | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NFH 600A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 600V, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:1.42kW; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40C ;RoHS Compliant: Yes |
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