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型号： CM600E2Y-34H
厂商： POWEREX INC
元件分类： IGBT 晶体管
英文描述： HIGH POWER SWITCHING USE INSULATED TYPE
中文描述： 600 A, 1700 V, N-CHANNEL IGBT
封装： POWER MODULE-10
文件页数： 2/4页
文件大小： 45K
代理商： CM600E2Y-34H
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
°
C)
V
GE
= 0V
V
CE
= 0V
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
Pulse
T
C
= 25
°
C, IGBT part
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
1700
±
20
600
1200
600
1200
6200
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
V
V
A
A
A
A
W
°
C
°
C
V
N·m
N·m
N·m
kg
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector current
Emitter current
Symbol
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM
(Note 2)
P
C
(Note 3)
T
j
T
stg
V
iso
Item
Conditions
Unit
Ratings
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 850V, I
C
= 600A, V
GE
= 15V
V
CC
= 850V, I
C
= 600A
V
GE1
= V
GE2
= 15V
R
G
= 3.3
Resistive load switching operation
I
E
= 600A, V
GE
= 0V
I
E
= 600A
die / dt = –1200A /
μ
s
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 1/2 module)
I
F
= 600A, Clamp diode part
I
F
= 600A
di
f
/ dt = –1200A /
μ
s, Clamp diode part
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/2 module)
I
C
= 60mA, V
CE
= 10V
I
C
= 600A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
12
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.020
0.064
—
3.25
2.00
—
0.064
—
mA
μ
A
nF
nF
nF
μ
C
μ
s
μ
s
μ
s
μ
s
V
μ
s
μ
C
K/W
K/W
K/W
V
μ
s
μ
C
K/W
K/W
—
—
2.75
3.30
70
10.0
3.8
3.3
—
—
—
—
2.40
—
100
—
—
0.016
2.50
—
100
—
0.016
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.5
4.5
6.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Min
Typ
Max
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC
(Note 2)
t
rr
(Note 2)
Q
rr
(Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
V
FM
t
rr
Q
rr
R
th(j-c)
R
th(c-f)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
Thermal resistance
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
—
—
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相关代理商/技术参数
参数描述
CM600E2Y-34H_03 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
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CM600HA12E 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 600A I(C)
CM600HA-12H 功能描述:IGBT MOD SGL 600V 600A H SER RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B
CM600HA-24A 功能描述:IGBT MOD SGL 1200V 600A A SERIES RoHS:否 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B
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