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参数资料
| 型号： | CM75DU-24F |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 2/4页 |
| 文件大小： | 107K |
| 代理商： | CM75DU-24F |
2
CM75DU-24F
Trench Gate Design Dual IGBTMOD
75 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM75DU-24F
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
c
= 25
°
C)
Peak Collector Current
75
Amperes
150*
Amperes
Emitter Current** (T
c
= 25
°
C)
Peak Emitter Current**
75
Amperes
150*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C, T
j
≤
150
°
C)
Mounting Torque, M5 Main Terminal
450
Watts
31
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
Weight
–
310
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 7.5mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V, T
j
= 25
°
C
I
C
= 75A, V
GE
= 15V, T
j
= 125
°
C
V
CC
= 600V, I
C
= 75A, V
GE
= 15V
I
E
= 75A, V
GE
= 0V
–
–
1
mA
Gate Leakage Voltage
–
–
20
μ
A
Gate-Emitter Threshold Voltage
5
6
7
Volts
Collector-Emitter Saturation Voltage
–
1.8
2.4
Volts
–
1.9
–
Volts
Total Gate Charge
Q
G
V
EC
–
825
–
nC
Emitter-Collector Voltage**
–
–
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75DU-24H | 功能描述:IGBT MOD DUAL 1200V 75A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75DU-24H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75DY12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) |
| CM75DY-12E | 制造商:PRX 功能描述: |
| CM75DY-12G | 制造商:PRX 功能描述: |
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