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参数资料
| 型号： | CM75DU-24F |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 4/4页 |
| 文件大小： | 107K |
| 代理商： | CM75DU-24F |
4
CM75DU-24F
Trench Gate Design Dual IGBTMOD
75 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4
GATE CHARGE, Q
G
, (nC)
G
G
,
GATE CHARGE, V
GE
20
0
200
400
16
12
8
4
0
600
1200
V
CC
= 600V
800
1000
V
CC
= 400V
I
C
= 75A
EMITTER CURRENT, I
E
, (AMPERES)
R
r
,
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
2
10
0
10
1
10
2
10
1
10
0
t
rr
I
rr
10
2
10
1
10
0
r
,
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
=
±
15V
R
G
= 4.2
T
= 125
°
C
Inductive Load
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
0
1.0
2.0
3.0
4.0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
E
E
,
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
S
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T
j
= 25
°
C
0
6
8
12
10
18
16
14
20
4
3
2
1
0
I
C
= 30A
I
C
= 150A
I
C
= 75A
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0
30
60
90
120
2
1
0
150
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
0
T
j
= 25
o
C
25
50
75
100
125
150
V
GE
= 20V
15
109.5
9
8.5
8
11
V
CC
= 600V
V
GE
=
±
15V
R
G
= 4.2
T
= 25
°
C
Inductive Load
T
j
= 25
°
C
TIME, (s)
t
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
-2
10
-1
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
0
10
1
10
-1
10
-2
10
-3
Z
t
t
Per Unit Base
R
th(j-c)
= 0.28
°
C/W (IGBT)
R
th(j-c)
= 0.47
°
C/W (FWDi)
Single Pulse
T
C
= 25
°
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75DU-24H | 功能描述:IGBT MOD DUAL 1200V 75A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75DU-24H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75DY12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) |
| CM75DY-12E | 制造商:PRX 功能描述: |
| CM75DY-12G | 制造商:PRX 功能描述: |
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